Proceedings ArticleDOI
The CCD flash gate
James R. Janesick,Torn Elliott,Taher Daud,Dave Campbell +3 more
- Vol. 0627, pp 543-582
TLDR
In this article, preliminary findings are presented for a new approach that significantly improves the quantum efficiency of the current generation of high-performance, thinned, backside illuminated silicon CCDs.Abstract:
Preliminary findings are presented for a new approach that significantly improves the quantum efficiency of the current generation of high-performance, thinned, backside illuminated silicon CCDs. Experiments have shown that the application of a less than 4-micron thick layer of metal with high work function to the backside of the CCD can yield 100-percent internal quantum efficiency in the visible, UV, XUV and soft X-ray regions of the spectrum. Theory and solid state models describing the new technique (the 'CCD flash gate'), and a considerable amount of experimental data, are discussed. Specific recommendations for use of the flash gate in present and future CCDs are also reviewed.read more
Citations
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Patent
X-ray imaging system and solid state detector therefor
TL;DR: The x-ray imaging system in this paper comprises an x ray source for producing an xray beam having an energy of at least 30 kVp and an x-rays detector consisting a solid state integrated circuit having a silicon substrate and a plurality of charge storage devices.
Journal ArticleDOI
Charge-Coupled-Device Charge-Collection Efficiency And The Photon-Transfer Technique
TL;DR: In this article, the authors present a definition of CCE performance and introduce a standard test tool (the photon-transfer technique) for measuring and optimizing this important CCD parameter.
Proceedings ArticleDOI
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James R. Janesick,Tom Elliott,George Frasehetti,S. A. Collins,Morley M. Blouke,Brian L. Corrie +5 more
TL;DR: In this article, the authors describe the characteristics of the interface between these oxides and the photo-sensitive silicon and indicate the extent to which CCD performance (e.g. dark current, spectral response, charge collection efficiency, charge transfer efficiency, pixel-nonuniformity read noise full well capacity blooming residual image and vulnerability to ionizing radiation damage) depend* upon these interfacial characteristics.
Proceedings ArticleDOI
Fano-noise-limited CCDs
TL;DR: In this article, Fano-noise-limited test data is presented for two different CCD types and a CCD derived estimate of the Fano factor is determined by evaluating ultra low-modulation images (less than 1 electron peak-to-peak) it is shown that the CCD's global CTE is now superior to its read noise floor.
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Low dose mammography system
TL;DR: In this paper, the x-ray detector is constructed as a PiN diode with the voltage bias direction parallel to the direction of incident radiation, and the detector signals are processed to provide a digital image of the tissue sample.
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