Journal ArticleDOI
The determination of device noise parameters
R.Q. Lane
- Vol. 57, Iss: 8, pp 1461-1462
TLDR
In this paper, a novel noise measurement technique is outlined which results in data that directly gives the noise parameters of the test device when processed by a simple computer program, which can be used to estimate the noise of a test device.Abstract:
A novel noise measurement technique is outlined which results in data that directly give the noise parameters of the test device when processed by a simple computer program.read more
Citations
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Journal ArticleDOI
Noise modeling and measurement techniques (HEMTs)
TL;DR: In this paper, the high electron mobility transistor's (HEMT's) noise behavior is presented from theoretical and experimental points of view, and a comparison between the noise performance of both MESFETs and HEMTs is carried out.
Journal ArticleDOI
Microwave Field-Effect Transistors--1976
TL;DR: The principle of operation is outlined for Si- and GaAs-MESFET's; the basic device physics, equivalent circuit, high-frequency limitations, and noise behavior are treated.
Journal ArticleDOI
Accuracy improvements in microwave noise parameter measurements
TL;DR: In this article, it is shown that for good accuracy the test source impedances need not be grouped around the impedance that produces the minimum noise figure, and an algorithm is implemented which avoids errors caused by different noise source 'on' and 'off' impedances.
Journal ArticleDOI
A super low-noise 0.1 mu m T-gate InAlAs-InGaAs-InP HEMT
TL;DR: In this paper, it is reported that 0.1- mu m T-gate InAlAs-InGaAs-inP HEMTs have exhibited state-of-the-art noise and gain performance well up to 100 GHz.
Journal ArticleDOI
A Wave Approach to the Noise Properties of Linear Microwave Devices
TL;DR: In this paper, the authors present a derivation of the noise properties of linear two-ports in terms of noise waves, which leads to a convenient measurement method in distributed systems.
References
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Journal ArticleDOI
Available Power Gain, Noise Figure, and Noise Measure of Two-Ports and Their Graphical Representations
TL;DR: In this paper, the available power gain and noise measure of linear two-ports are introduced in terms of the two-port parameters and the gain and the noise parameters, respectively, and their graphical representations on the source admittance plane with rectangular coordinates are also shown.
Journal ArticleDOI
The noise performance of microwave transistors
TL;DR: In this article, a small-signal common-emitter equivalent circuit was proposed for the L-band (1 to 2 Gc/s) frequency range using Ge and Si microwave transistors.