Journal ArticleDOI
The surface-charge transistor
TLDR
The surface charge transistor (SCT) as mentioned in this paper is a new active semiconductor device that can be used to store, transport, and control the transport of nonequilibrium surface charge.Abstract:
The surface-charge transistor (SCT) is a new active semiconductor device that can be used to store, transport, and control the transport of nonequilibrium surface charge. In its simplest (discrete) form, it consists of two adjacent storage electrodes and an overlapping control electrode. All of these electrodes are separated from each other and the semiconductor surface by a thin insulating film. This structure will provide storage and controlled transport of mobile surface charge along the semiconductor surface. Data are presented for both the quasi-static characteristics of this device and its transient response. The quasi-static data are compared with an analysis based on the solution of Poisson's equation for the device, and the measured transient response is compared with a numerical solution of the equation of motion for surface-charge transport. The accuracy of these models is attested to by the agreement between theory and experiment. The fabrication of surface-charge transistor structures is also described.read more
Citations
More filters
Journal ArticleDOI
A three-level metallization three-phase CCD
TL;DR: In this paper, a three-phase three-level metal electrode structure for CCD's was proposed and shown to lead to high performance, high packing density, and high yield over very large areas.
Journal ArticleDOI
A surface-charge correlator
TL;DR: In this article, a cross-correlator module with a fixed tap weight function and separate binary correlators for each binary digit is proposed. But the tap weights are restricted to values of plus and minus one, and the disadvantage of fixed tap weights can be overcome by using a weighted binary code for the tap weight functions and separate correlators.
Journal ArticleDOI
Intracell charge-transfer structures for signal processing
TL;DR: An approach is presented for implementing a fully programmable transversal filter using surface charge-transfer techniques and both experimental results and theoretical expressions for their performance are presented.
Journal ArticleDOI
Surface‐Charge Transport in a Multielement Charge‐Transfer Structure
TL;DR: In this paper, a two-phase 14-stage transfer shift register has been built and operated which uses the surface-charge transistor structure to effect the transfer of signal charge from one stage to the next.
Journal ArticleDOI
Computer model and charge transport studies in short gate charge-coupled devices
TL;DR: In this article, a computer model has been developed that simulates charge transport of carriers in a surface channel charge-coupled device, based on the charge continuity and current transport equations with a time dependent surface field.
References
More filters
Journal ArticleDOI
Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces
O. Leistiko,A.S. Grove,C.T. Sah +2 more
TL;DR: In this article, the authors performed extensive measurements of electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces using the field effect conductance technique and found that both electron and holes were practically constant and approximately equal to one half of their respective bulk values up to a surface field of about 1.5 × 105volts/cm, corresponding to about 1012electronic charges/cm2 induced in the silicon.
Journal ArticleDOI
The P-channel refractory metal self-registered MOSFET
TL;DR: In this paper, p-channel self-registered Mo-gated MOSFET fabrication techniques are described and tested, and the results show that the resulting pchannel devices are T2L compatible with excellent threshold reproducibility and exhibit stability during accelerated temperature bias life testing.
Journal ArticleDOI
Performance of refractory metal multilevel interconnection system
TL;DR: In this article, high-temperature refractory metal (Mo, W) interconnections are compared to diffused Si planar runs and heavily doped polycrystalline Si films.
Journal ArticleDOI
A memory system based on surface-charge transport
TL;DR: The surface charge transistor (SCT) is an integrated circuit element and involves a new concept for controlling the transfer of stored electrical charge along the surface of a semiconductor as mentioned in this paper.