Journal ArticleDOI
Thin-film lateral bipolar transistor in silicon-on-sapphire structure
R. Zuleeg,P. Knoll +1 more
Reads0
Chats0
TLDR
In this article, the authors used a heteroepitaxial films of silicon-on-sapphire to fabricate lateral bipolar n-p-n transistors with a common base direct-current amplification factor of 0.9 and a maximum frequency of oscillation of 2.4 GHz.Abstract:
Heteroepitaxial films of silicon-on-sapphire were used to fabricate lateral bipolar n-p-n transistors. The devices have a common-base direct-current amplification factor of 0.9 and a maximum frequency of oscillation of 2.4 GHz. As a result of the vertical p-n-junction arrangement, small junction areas are possible, e.g. 1×10−6cm2, which yield depletion-layer capacitances of 0.02–0.05 pF.read more
Citations
More filters
Journal ArticleDOI
Single-crystal films of silicon on insulators
J D Filby,S Nielsen +1 more
TL;DR: A good deal of research has been devoted to silicon films on single-crystal sapphire substrates as mentioned in this paper, with particular attention paid to the orientation relationship between the silicon and the substrate.
Journal ArticleDOI
Fully isolated lateral bipolar—MOS transistors fabricated in zone-melting-recrystallized Si films on SiO 2
TL;DR: In this article, a four-terminal device that can be operated either as a lateral n-p-n bipolar transistor or as a conventional n-channel MOSFET has been fabricated in silicon-on-insulator films prepared by graphitestrip-heater zonemelting recrystallization.
Journal ArticleDOI
Silicon films on sapphire
TL;DR: The physical properties of silicon on sapphire (SOS) thin films and their impact on the operation of integrated devices are systematically reviewed in this paper, with emphasis on autodoping, stress, lattice defects and interface behaviour.
Patent
Simultaneous fabrication of CMOS transistors and bipolar devices
Alfred C. Ipri,John Carl Sarace +1 more
TL;DR: In this article, a process for the simultaneous fabrication of CMOS transistors and bipolar devices on the same integrated circuit is described, which follows the standard Silicon-Gate Deep Depletion technology up through gate definition.
Journal ArticleDOI
Thin-film silicon: Preparation, properties, and device applications
TL;DR: In this article, the properties of thin silicon films deposited on sapphire (SOS) and magnesium aluminate spinel by pyrolysis of silane in the temperature range 900-1200°C were reviewed.
References
More filters
Journal ArticleDOI
Lateral complementary transistor structure for the simultaneous fabrication of functional blocks
TL;DR: In this paper, an isolated p-n-p transistor structure fabricated by the same technique used for the conventional all n-p-n transistor functional block without any additional processing steps is described.
Journal ArticleDOI
The Characteristic Frequencies of a Drift Transistor
TL;DR: In this paper, the authors used the theory of the simple one-dimensional model to find the frequency variation of the current gain of a drift transistor, and used this to find how junction capacitances and base resistance affect the measurement of the characteristic frequencies.
Related Papers (5)
Thin-Film Bipolar Transistors on Recrystallized Polycrystalline Silicon Without Impurity Doped Junctions: Proposal and Investigation
Kanika Nadda,M. Jagadesh Kumar +1 more