XIS: A Low-current, High-voltage Back-junction Back-contact Device
G.J.M. Janssen,J.A.M. van Roosmalen,Arthur Weeber,Agnes A. Mewe,Paula C. P. Bronsveld,M.A. de Keijzer,M.K. Stodolny +6 more
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TLDR
In this article, a low-current, high-voltage back-junction backcontact device was demonstrated by the successful transformation of finished IBC cells into XIS (crystalline silicon interconnected strips) devices, leading to 8.5 V for a series connection of 14 strip cells.About:
This article is published in Energy Procedia.The article was published on 2013-01-01 and is currently open access. It has received 5 citations till now. The article focuses on the topics: Groove (engineering).read more
Citations
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Journal ArticleDOI
Fabrication of High Voltage Modules by Optimization of Performances of Reduced Area Silicon Solar Cells
TL;DR: In this paper, the authors investigated the influence of the cell dimension on the efficiency and showed that due to a high recombination activity on the cell edges, a drastic loss in efficiency can be observed for samples area below 16 cm 2, and the comparison of two cell formats (45×45 mm 2 and 78×26 mm 2 ) confirms the interest of reducing the peripheral length over the cell area (square shape).
Journal ArticleDOI
Role of O-2 radicals on silicone plasma treatments for a-Si:H surface passivation of PV wafers bonded to glass
Stefano Nicola Granata,Stefano Nicola Granata,Alessio Marchegiani,Alessio Marchegiani,Twan Bearda,Loic Tous,David Cheyns,Yaser Abdulraheem,Ivan Gordon,Jozef Szlufcik,Robert Mertens,Jef Poortmans,Jef Poortmans +12 more
TL;DR: Argon and oxygen plasmas are used on silicone adhesives to eliminate the negative influence of silicone on amorphous silicon (a-Si:H) surface passivation of wafers bonded to glass as discussed by the authors.
Patent
Silicon-based composite substrate having active zones separated by electrical insulation zones comprising a silicon carbide strip
Garandet Jean-Paul,Chaintreuil Nicolas,Béatrice Drevet,Nicolas Eustathopoulos,Annalaura Fasiello,Eric Pilat,Yannick Veschetti +6 more
TL;DR: In this article, the authors proposed a silicon-based composite substrate with active zones of p-doped and/or ndoped silicon, each of the active zones extending through the entire thickness of the substrate, two active zones being separated from one another by at least one electrical insulation zone formed by a silicon carbide strip.
Patent
Silicon-based composite substrate having active zones separated by silicon-oxide-based electrical insulation zones
Garandet Jean-Paul,Chaintreuil Nicolas,Béatrice Drevet,Nicolas Eustathopoulos,Annalaura Fasiello,Eric Pilat,Yannick Veschetti +6 more
TL;DR: In this paper, the authors proposed a silicon-based composite substrate with active zones (10) of p-doped and/or ndoped silicon, each of the active zones extending through the entire thickness of the substrate, two active zones being separated from one another by at least one electrical insulation zone (20) having a mass content of silicon oxide SiO 2 greater than or equal to 50 %.
Journal ArticleDOI
Small area high voltage photovoltaic module for high tolerance to partial shading
TL;DR: In this paper , a small area-highvoltage (SAHiV) module with rectangle and triangle shapes for high partial shading tolerance was introduced. But the performance of the SAHiV module was not compared with conventional and shingled modules.
References
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Journal ArticleDOI
Epoxy-Induced Spalling of Silicon
Roberto Martini,Mario Gonzalez,Frederic Dross,Alex Masolin,Jan Vaes,Danny Frederickx,Jef Poortmans +6 more
TL;DR: In this article, the authors demonstrate the possibility to induce lift-off of a thin silicon foil by means of curing an epoxy layer on top of a silicon wafer, which has the advantages of reducing metal contamination in the silicon and lowering the operating temperatures below 150°C.
Journal ArticleDOI
Development of a-Si:H/c-Si heterojunctions for the i2-module concept: Low-temperature passivation and emitter formation on wafers bonded to glass
Jonathan Govaerts,Stefano Nicola Granata,Twan Bearda,Frederic Dross,Caroline Boulord,Guy Beaucarne,Ferenc Korsos,Kris Baert,Ivan Gordon,Jef Poortmans +9 more
TL;DR: In this article, a-Si:H layers can be deposited on wafers that are bonded to a glass superstrate, to provide a low-temperature (heterojunction) approach for passivation and emitter formation.
Journal ArticleDOI
Aging behaviour of laser welded Al-interconnections in crystalline silicon modules
Henning Schulte-Huxel,Susanne Blankemeyer,Robert Bock,Agnes Merkle,Sarah Kajari-Schröder,Rolf Brendel +5 more
TL;DR: In this article, the artificial aging of PV modules interconnected with the aluminum-based milling and milling (AMELI) process is investigated. But, the authors focus on the use of glass and encapsulant films as possible interconnector substrates that carry an Al-film.
Proceedings ArticleDOI
Towards 21% efficient n-cz ibc based on screen printing
Arthur Weeber,Evert Eugène Bende,M. Koppes,Ingrid G. Romijn,M.W.P.E. Lamers,Y. Komatsu,Agnes A. Mewe,Ilkay Cesar,D. Morecroft,M. Cascant,F.J. Castano +10 more
TL;DR: In this article, the IBC cells have been fabricated at ECN laboratories with a best cell efficiency of 19.1%, using n-type Cz material and a process flow based on all-screen-printed patterning and metallization.
Journal ArticleDOI
Kerfless Wafering for Silicon Wafers by Using a Reusable Metal Layer
TL;DR: In this article, a new method is proposed, which is based on mechanical loads in a layer system of silicon, glueing material, and a re-usable metal stripe, which does not need to heat up and cool down the whole silicon crystal for each spalling cycle and thus may be considerably more time and energy efficient than previous thermal spalling methods.