Journal ArticleDOI
XPS Analysis of 4H-SiC Surfaces Oxidized by Helium-Based Atmospheric-Pressure Water Vapor Plasma for Plasma-Assisted Polishing
Hui Deng,Kazuya Yamamura +1 more
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TLDR
In this article, Zhao et al. observed 4H-SiC surfaces processed by water vapor plasma oxidation using angle resolved X-ray photoelectron spectroscopy (ARXPS).Abstract:
Plasma-assisted polishing (PAP) was successfully applied to single-crystal SiC to obtain an atomically flat surface without introducing any scratches. To clarify the flattening mechanism and increase the material removal rate (MRR) of PAP, investigation of the oxidation process in PAP is essential. In this study, we observed 4H-SiC (0001) surfaces processed by water vapor plasma oxidation using angle resolved X-ray photoelectron spectroscopy (ARXPS). Water vapor plasma oxidation was conducted for 1 min and 5 min. SiO2 and silicon oxycarbide were observed as the oxidation products. A decrease in the plasma irradiation time decreased the thickness of the oxide layer, particularly that of the silicon oxycarbide layer.read more
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Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2
Wantang Wang,Baoguo Zhang,Yunhui Shi,Tengda Ma,Jiakai Zhou,Ru Wang,Hanxiao Wang,Nengyuan Zeng +7 more
TL;DR: In this article, the effect of pH, persulfate concentration, and TiO2 dosage on CMP in-depth, and to ultimately optimize the polishing process was investigated for improving the CMP properties of Si-face of the 4H-SiC wafers.
Journal ArticleDOI
A Review on Precision Polishing Technology of Single-Crystal SiC
TL;DR: In this paper , the most commonly used polytypes of single-crystal SiC, such as CMP, PCMP, PAP, and CARE, were reviewed and compared with emphasis on the experimental setup, polishing mechanism, material removal rate (MRR), and surface roughness.
Journal ArticleDOI
Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers
TL;DR: In this paper , the development of CMP with chemical, mechanical, and chemical-mechanical synergistic approaches to improve the performance of the CMP is systematically reviewed, and the basic principle and processing system of each improvement approach are presented.
References
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Journal ArticleDOI
ARXPS studies of SiO2-SiC interfaces and oxidation of 6H SiC single crystal Si-(001) and C-(001) surfaces
TL;DR: In this paper, an ARXPS analysis of oxidized Si-(001) and C-(001)-surface surfaces of 6H SiC reveals the interface oxide Si4C4−xO2 (x < 2), likely a reaction product of a peroxidic O2-bond to a SiC double layer.
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Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface
TL;DR: In this article, a novel polishing technique combined with the irradiation of atmospheric pressure plasma was proposed for the finishing of a silicon carbide material, and a scratch-free atomically flat surface with an rms roughness of 0.1nm level was obtained.
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High-integrity finishing of 4H-SiC (0001) by plasma-assisted polishing
TL;DR: In this paper, a novel machining method combined with the irradiation of atmospheric pressure plasma was proposed for the finishing of difficult-to-machine materials, and a ball-on-disc test using an alumina ceramic ball revealed that the wear rate of SiC was 20-fold higher than that of the surface without plasma irradiation.
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Improvement of SiO2/4H-SiC interface properties by oxidation using hydrogen peroxide
TL;DR: The effect of using H2O2 in the thermal growth process of dielectric films on n-type 4H-SiC substrates has been investigated in this article.
Journal ArticleDOI
Damage-Free Dry Polishing of 4H-SiC Combined with Atmospheric-Pressure Water Vapor Plasma Oxidation
TL;DR: In this article, a dry polishing technique combined with atmospheric pressure water vapor plasma oxidation has been proposed for the high-integrity smoothing of SiC materials, and an atomically flat scratch-free surface with an rms roughness of less than 0.1 nm was obtained.