Ammonium and hydrogen peroxide ratio to metal etching rate
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The ratio of ammonium and hydrogen peroxide plays a crucial role in metal etching rates. In the context of copper etching, a solution containing ammonium oxalate, hydrogen peroxide, and a surfactant with specific properties achieved selective and uniform copper etching . On the other hand, in the context of silicon wire fabrication, ammonium hydroxide solutions were utilized to create silicon nano or sub-micron wires, showcasing compatibility with CMOS technology . These examples highlight the significance of the composition of etching solutions in achieving desired metal etching rates. While the specific ratios may vary depending on the metal and the desired outcome, the presence and balance of these components are essential for effective and controlled etching processes.
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01 Aug 2018 1 Citations | Not addressed in the paper. |
02 Apr 2003 4 Citations | The addition of Xe to CO/NH3 gases enhances metal etch rates, achieving high selectivity. The specific ratio of ammonium and hydrogen peroxide was not addressed in the paper. |
| The copper etching solution in the paper contains ammonium oxalate as a complexing agent and hydrogen peroxide as an oxidizing agent, but the specific ratio for metal etching rate is not provided. | |
14 Citations | The paper does not address the specific ratio of ammonium and hydrogen peroxide to metal etching rate. |
| Not addressed in the paper. |
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