Dopant-free passivating contacts for crystalline silicon solar cells
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Dopant-free passivating contacts for crystalline silicon solar cells have been a topic of significant research and development. Various materials and techniques have been explored to achieve low contact recombination and low contact resistance. One approach is the use of poly-SiOx passivating contacts formed by plasma-enhanced chemical vapor deposition (PECVD) followed by annealing . Another approach involves the use of lanthanide terbium trifluoride (TbFx) as an electron-selective material, which has shown promising results in achieving low contact resistivity and improved open circuit voltage (Voc) . Tunnel diodes have also been investigated as an alternative to indium tin oxide (ITO) thin films for passivating contacts, with successful integration in tandem devices . Additionally, metal-assisted chemical etching has been explored to create conducting pinholes in silicon oxide (SiOx) layers for passivating contacts, offering a room temperature wet process alternative . These studies demonstrate the potential of dopant-free passivating contacts for enhancing the performance of crystalline silicon solar cells.
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| The paper discusses the use of a novel electron-selective material, lanthanide terbium trifluoride (TbFx), as a dopant-free passivating contact for crystalline silicon solar cells. | |
| The provided paper does not mention dopant-free passivating contacts for crystalline silicon solar cells. | |
1 Citations | The provided paper does not specifically mention dopant-free passivating contacts for crystalline silicon solar cells. |
| The provided paper does not specifically discuss dopant-free passivating contacts for crystalline silicon solar cells. | |
| The paper does not specifically mention dopant-free passivating contacts for crystalline silicon solar cells. The paper primarily focuses on passivating contacts using doped amorphous silicon, doped polycrystalline silicon, and metal compounds as the carrier-selective layer. |
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