How calcluate the forming RRAM switching speed?
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The switching speed of resistive random access memory (RRAM) devices can be determined by several factors. In redox-based RRAM devices, the ultimate switching speed limit is discussed to be limited by the phonon frequency, which is the same for both local Joule heating and high electric fields . It is also mentioned that temperature and voltage can be brought fast enough to the device to reach the ultimate switching limit . Additionally, the effect of program/erase speed on switching uniformity in filament-type RRAM devices is investigated, and it is found that fast switching operation achieves more uniform program/erase performance . Furthermore, the property of PCMO RRAM memory resistors is studied, and it is concluded that the electrical pulsed induced resistance increase is a current-driven process, while the electrical pulse-induced reduction of resistance is a field-driven process .
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| Papers (4) | Insight |
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| The ultimate switching speed of redox-based resistive switching devices is limited by the phonon frequency, with a lower limit of about a picosecond. | |
| The paper does not provide information on how to calculate the forming RRAM switching speed. | |
01 Dec 2006 147 Citations | The paper proposes a method to achieve high-speed unipolar RRAM switching by using short pulses and controlling the resistance connected to the RRAM device. |
22 Citations | The paper does not provide information on how to calculate the forming RRAM switching speed. |
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