How can simulation based organic field effect transistors be used to design new devices?
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Simulation-based organic field effect transistors (OFETs) can be used to design new devices by providing insights into the charge transport processes and properties of organic semiconductors (OSs) . These simulations help in understanding the performance and characteristics of OFET devices, which are crucial for achieving higher device efficiencies and accurate evaluations of OS charge mobilities . By developing OFET models based on kinetic Monte Carlo approaches, the impact of factors such as disorder, mobility anisotropy, traps, grain boundaries, and film morphology on charge transport can be fully considered . These models provide a molecular-level resolution and can be used to study both amorphous and crystalline OS thin films, enabling a better understanding of the charge transport mechanism in OFETs . Additionally, simulation-based OFET models can guide the design of doped OFETs with high performance by providing new design rules based on the effect of doping on the transfer characteristic of OFETs . Overall, simulation-based OFETs offer a valuable tool for designing new devices and optimizing their performance .
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19 Citations | The provided paper does not directly answer the question about how simulation-based organic field-effect transistors can be used to design new devices. The paper focuses on the need for a standard compact model for organic field-effect transistors and discusses the requirements, progress, and challenges in compact device modeling. |
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17 Citations | The paper does not provide information on how simulation-based organic field-effect transistors can be used to design new devices. |
| The provided paper does not mention simulation-based organic field-effect transistors or how they can be used to design new devices. | |
| The provided paper does not mention simulation-based organic field effect transistors or their use in designing new devices. |
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