How does the variation of etch rate according to film's roughness?
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The variation of etch rate according to film roughness is influenced by several factors. Studies show that the etch rate is inversely related to surface roughness, especially with variations in source power and bias power . Additionally, the presence of rough protrusions enhances etching, while shadowing of neutral etchants within cavities reduces the etch rate, impacting the removal of roughness during the etching process . Furthermore, the roughening rate after etching is determined by the polymer structure and energy density deposited by ions, showcasing a linear scaling with energy density and a direct correlation to sidewall roughness of etched nanostructures . These findings highlight the complex interplay between etch rate and surface roughness in plasma etching processes.
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30 Citations | The etch rate variation influences film roughness evolution during plasma etching of composite materials, with different behaviors observed for anisotropic and isotropic etching modes. |
20 Citations | The etch rate varies based on the roughness of the photoresist film, with rough protrusions etching faster due to ion exposure and shadowing effects slowing etching in cavities. |
31 Citations | The etch rate varies inversely with surface roughness, influenced by source power, bias power, and ion energy in plasma etching of silicon carbide. |
| The etch rate variation is influenced by film roughness, with accurate real-time measurements crucial for control; spectroscopic reflectometry enables fast, in-situ monitoring of polycrystalline silicon thin film etch rates. |
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