How the photoresponsivity of phototransistor affected by gate bias?
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The photoresponsivity of a phototransistor is significantly influenced by the gate bias applied. For instance, in the case of a high-performance <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub>-based solar-blind metal–oxide–semiconductor field-effect phototransistor (SBPT), an excellent photo-dark current ratio, high responsivity, large external quantum efficiency, and high detectivity were achieved at a gate voltage bias of 0 V. Similarly, in a phototransistor based on a vertical HfSe2/MoS2 heterostructure, efficient gate tunability for photoresponse led to high responsivity and ultrahigh specific detectivity under bias conditions. These findings underscore the critical role of gate bias in modulating the photoresponsivity of phototransistors, highlighting its importance in optimizing their performance for various applications.
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| The photoresponsivity of the phototransistor can be tuned by modulating the gate bias, allowing for control over the device's performance in response to light stimuli. | |
1 Citations | The photoresponsivity of the phototransistor is high at 0 V gate bias, with a value of 1.3 × 10^7 A/W, showcasing excellent performance under zero gate bias conditions. |
| The photoresponsivity of the phototransistor is significantly influenced by gate bias, showcasing high responsivity of up to 1.42 × 10^3 A/W under bias and 10.2 A/W under zero bias. | |
| The photoresponsivity of the phototransistor can be tuned by modulating the gate bias, allowing for further optimization of the device's performance in UV-visible broadband photodetection applications. | |
| The photoresponsivity of the phototransistor is significantly influenced by gate bias, showing high responsivity of up to 1.42×10^3 A/W under bias and 10.2 A/W under zero bias. |
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