Important key points related to PNP BJT?
Best insight from top research papers
A PNP type bipolar transistor consists of a projecting pole with a rectangular cross-section that lifts the base of the transistor to a horizontal surface for protection. The transistor also includes a heavily doped N-type part that forms the base contact. In a feedback BJT type self-excited Boost converter, the driving circuit of the main switching tube is composed of a resistor and a PNP type BJT tube. The emitter of the PNP type BJT tube is connected with one end of the resistor, and the base of the PNP type BJT tube is connected with the collector of the main switching tube. A high voltage lateral PNP device can exhibit snapback behavior similar to NPN-based ESD clamps, and the formation of a quasi-neutral electron-hole plasma in the N-base drift region reduces the base electric field, explaining the observed behavior.
Answers from top 5 papers
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| Papers (5) | Insight |
|---|---|
| The paper discusses the use of PNP BJT in a phase change memory device to prevent changes in the composition of the phase change layer and widen the sensing margin of a bit line. | |
| A new high voltage lateral PNP with sufficient current density for small footprint ESD protection is experimentally demonstrated. | |
| The PNP BJT is used in the driving circuit of the main switching tube in the feedback BJT type self-excited Boost converter. | |
| The paper discusses the use of a second P+ layer in a silicon carbide BJT to increase the current gain of the device. | |
| The PNP type bipolar transistor includes a projecting pole with a rectangular cross-section and a base lifted up to receive protection. |
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