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Production of field effect transistors? 


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The production of field effect transistors involves several key steps outlined in the provided research contexts. These steps include depositing semiconductor material on a substrate, forming gate dielectric layers, arranging gate electrode layers, creating contact trenches, back-producing gate electrodes, forming source/drain regions, and connecting them with contact structures . Additionally, methods include depositing insulating films, refractory metal films, and gate metals, etching to define gate structures, and utilizing etching stopper layers to maintain film thickness . Furthermore, the process may entail depositing conducting and insulating materials on a temporary substrate before transferring them to the final substrate . Techniques like self-assembled monolayers and Schottky junctions are also employed to enhance transistor performance, reduce resistance, and improve reliability .

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Production of field effect transistors involves creating a semiconductor web on a substrate, adding gate dielectric and electrode layers, forming source/drain regions, and connecting them with contact structures.
The process involves substrate preparation, gate electrode deposition, organic compound self-assembly, etching, and post-etching reapplication, contributing to the production of field effect transistors.
Field effect transistors are produced by depositing semiconductor material on temporary material, removing part of it, and forming conducting material above and beneath the semiconductor, with insulating material between.
The method involves depositing insulating and refractory metal films on a semiconductor substrate, forming gate structures, and utilizing an etching stopper layer for precise production of field effect transistors.

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