What is the appropriate temperature for heat treating IGZO after sputtering?
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The appropriate temperature for heat treating Indium-Gallium-Zinc Oxide (IGZO) thin films after sputtering varies based on different methods. Research suggests that traditional thermal annealing typically requires temperatures above 300°C . However, innovative approaches like simultaneous UV-thermal (U-T) treatment and simultaneous ultraviolet and thermal (SUT) treatments have shown promising results at lower temperatures. The U-T treatment can lower the activation temperature to 150°C, significantly improving electrical characteristics and stability of IGZO thin-film transistors (TFTs) . Similarly, the SUT treatment reduces the processing temperature to 150°C while enhancing electrical performance metrics like mobility, on-off ratio, and threshold voltage shift . These findings indicate that utilizing UV-thermal or ultraviolet-thermal treatments can effectively activate IGZO films at lower temperatures for improved device performance.
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| Papers (5) | Insight |
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14 Citations | The research paper suggests that microwave and e-beam radiation can activate amorphous In-Ga-Zn-O semiconductors at room temperature as an alternative to traditional heat treatment above 300°C. |
| The appropriate temperature for heat treating IGZO thin films after sputtering is 600℃, as it leads to crystallization, reduced surface roughness, decreased oxygen vacancies, increased optical band gap, carrier concentration, and Hall mobility. | |
33 Citations | The appropriate temperature for heat treating IGZO after sputtering is 150°C, achieved through UV-thermal treatment, enhancing electrical performance and stability of thin-film transistors. |
15 Citations | The appropriate temperature for heat treating IGZO after sputtering is 150 °C, as shown in the study using simultaneous UV and thermal treatment to enhance device performance. |
74 Citations | The appropriate temperature for heat treating IGZO after sputtering is reduced to 150°C using simultaneous ultraviolet and thermal treatments, enhancing film quality and electrical characteristics significantly. |
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