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The CdS crystals grown under such conditions are expected to be of high quality and the latter is confirmed by the working parameters of scanning-electron-beam excited laser devices fabricated from the same CdS crystals.
The results indicate that the structure and optical properties of the CdS thin films can be improved as increasing the per pulse output energy of the femtosecond laser to 1.2 mJ.
The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition.
The corresponding PL and optical transmission results show that the optical properties of the CdS thin films deposited by the femtosecond laser ablation technique can be improved by increasing the substrate temperature from 100 to 450 °C.
They also confirm the outstanding optical properties of thin film CdS formed by pulsed-laser deposition and suggest the application of the films for effective up-conversation materials in ultra-fast experiments.
And the kinetic energy of the plasma produced by femtosecond laser strongly affects the structure and properties of the deposited CdS thin films.
Accordingly, KrF laser annealing is a simple and rapid process that can significantly enhance the low-light detection properties of CdS, a commercial photoconductor.
The result indicates that CdS nanoparticles can be used as ideal microlaser material in future semiconductor laser devices.
This article presents a versatile method for fabrication of CdSe/CdS GQD distributed feedback (DFB) lasers by laser interference ablation.
More importantly, the CdS-DBR laser can realize single-mode emission, for the length of the resonance cavity can support a mode spacing larger than the bandwidth of the optical gain.

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