What's the key characteristics of field-plate dielectric that affect the TDDB of GaN-HEMTs?
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The key characteristics of the field-plate dielectric that significantly impact the Time-Dependent Dielectric Breakdown (TDDB) of GaN-HEMTs include the stress level and composition of the dielectric film. Stress variations in the SiN field-plate dielectric film, ranging from compressive to tensile, influence isolation leakage and gate leakage current in AlGaN/GaN HEMTs . Additionally, the incorporation of a SiO2 pocket around the field plate edge in GaN-HEMTs results in a substantial reduction in electric field intensity, carrier temperature, and self-heating, leading to improved device performance and reliability . Furthermore, optimized field plate structures, such as T-gate AlGaN/GaN HEMTs with dual discrete field plates, demonstrate enhanced breakdown characteristics and current collapse suppression, contributing to improved TDDB behavior in GaN-HEMTs .
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| Papers (5) | Insight |
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14 Citations | The key characteristics of the field-plate dielectric that affect the TDDB of GaN-HEMTs are film stress, with tensile stress suppressing current collapse and increasing gate leakage. |
1 Citations | The key characteristics of the field-plate dielectric affecting the TDDB of GaN-HEMTs are the SiO2 pocket at the field plate edge, reducing electric field, carrier temperature, and self-heating. |
3 Citations | The key characteristics of the field-plate dielectric that affect the TDDB of GaN-HEMTs are optimized structures like dual discrete field plates, enhancing breakdown voltage and reducing current collapse. |
20 Feb 2023 | The key characteristic of the field-plate dielectric impacting the TDDB of GaN-HEMTs is the gate-connected field plate, which offers optimal performance with lower parasitic effects. |
1 Citations | Field plate dielectric in GaN HEMTs affects breakdown voltage; increasing field plate length enhances breakdown voltage, but excessive length reduces it, impacting Time-Dependent Dielectric Breakdown (TDDB). |
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