Showing papers on "Antimonide published in 1985"

Metalorganic chemical vapor deposition of III‐V semiconductors

Abstract: The metalorganic chemical vapor deposition (MOCVD) of epitaxial III‐V semiconductor alloys on III‐V substrates is reviewed in detail. The emphasis is placed on both practical and theoretical knowledge of the equipment and deposition process. The chemistry of the source alkyls and the dynamics of the transport process are discussed. The growth of the GaAs and AlxGa1−xAs systems are treated as prototypical examples (and the most studied) of the III‐V materials. Latter sections review InP, Ga1−xInxAs, and related alloys. Finally, the antimonide and the other systems are reviewed. Electronic and optical devices fabricated from MOCVD‐grown materials are used as examples of the capabilities of the growth technique.

Room‐temperature operation of optically pumped InGaAsSb/AlGaAsSb double‐heterostructure laser at ≂2 μm

Abstract: Optically induced room‐temperature lasing at ≂2 μm of the InGaAsSb/AlGaAsSb double heterostructures is reported. The growth of the quaternary antimonide structures lattice matched to GaSb substrates by liquid phase epitaxy is described. The optical thresholds and their temperature dependence are comparable to the InGaAsP devices operating at 1.55‐μm wavelength regions.

Multialkali Photocathode (S20) Optimization : Use In Streak Camera Tubes And Image Intensifiers Associated

Abstract: Streak camera tubes have been developed with alkali antimonide photocathodes. At the be-ginning it was mainly monoalkali type S 9 or S 11 (caesium antimonide). These cathodes have a good sensitivity in blue and are currently used in photomultipliers for nuclear detec-tion. From theoretical and experimental results obtained in laboratory (Laboratoires d'Electronique et de Physique Appliquee - LEP), development studies on multialkali antimonide thin films have been recently carried out on industrial equipments at the Hyperelec factory. It is now possible to produce with a good reproducibility thin films with high red sensitivity. Particularly the use of transfer technique allows to obtaina very high sensitivity in the bandwidth of 800 - 850 nm. This characteristic is very important for calibration of streak camera tubes because it is made by using LED or ultra fast laser diodes emitting in the red. It is also important for increasing the detection sensitivity when streak tubes are used in connection with long fiber optics which transmit preferably red signal. The paper will describe the main parameters on which it is possible to act and the photo-cathode results expected on streak camera tubes processed by transfer technique.© (1985) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

Photoemissive cathode for high current density photoelectron generators

Abstract: A photoemissive cathode (16) for an electron beam generator suitable for direct-write semiconductor lithography applications comprises a light transmissive substrate (40), e.g. of quartz, glass, or sapphire, onto which is deposited an optically semitransparent, electrically conductive film (46), e.g. of chromium. This film (46) in turn is coated with a thin layer (48) of a photoemissive substance comprising cesium antimonide, sodium potassium antimonide, cesiated gallium phosphide, or cesiated gallium arsenide phosphide, and this photoemissive layer (48) will emit an intense and substantially monochromatic beam of electrons upon illumination with laser light of appropriate wavelength and energy. As shown, a thick film 42 of chromium is included. Steps for making the cathode are described.

The Valence Band Parameters of Cadmium Antimonide Determined by Cyclotron Resonance Measurements

Abstract: Cyclotron measurements of thermally excited holes in CdSb using a wide range of wavelength excitation from 1.200 to 118 μm was performed in a DC and a pulsed magnet spectrometer up to 35 teslas. A recent calculation of the Landau levels in the band model proposed by Yamada was used to derive the band parameters.