Showing papers on "Ellipsometry published in 1973"
76 citations
TL;DR: In this paper, experimental measurements consisting of ellipsometry (0.5-3.5 eV), normal-incidence reflectance (3.0-11.6 eV) and published data were used along with published data to determine the optical constants of indium.
Abstract: Experimental measurements consisting of ellipsometry (0.5-3.5 eV) and normal-incidence reflectance (3.0-11.6 eV) are used along with published data to determine the optical constants of indium from 0.5 to 15.5 eV. Although the over-all properties reflect free-electron behavior, departures from Drude theory can be understood in terms of interband transitions.
70 citations
Journal Article•
TL;DR: These studies confirm earlier findings that the adsorption of a globular protein such as bovine serum albumin (BSA) 1 and ovalbumin (OA) results in a monolayer about 30A thick while the reaction with appropriate antibodies increases the thickness of the layer to approximately 100A.
Abstract: Rothen and Mathot (1) and later Vroman and Adams (2) have shown that the antibody-antigen reaction will take place at a liquid-solid interface, and that the results of this interaction can be detected by the use of an ellipsometer. This optical instrument measures the adsorption and rotation of plane polarized light incident on the surface in question and has a limiting sensitivity of much less than a monolayer of adsorbed protein. I have used this technique to study the adsorption of protein from a solution onto various surfaces, such as Nb, Ta, Ni, Au, In, and Si, and further to observe the kinetics of the subsequent reaction with antibodies (Giaver, I., in preparation). These studies confirm earlier findings that the adsorption of a globular protein such as bovine serum albumin (BSA) 1 and ovalbumin (OA) results in a monolayer about 30A thick while the reaction with appropriate antibodies increases the thickness of the layer to approximately 100A.
63 citations
TL;DR: In this article, a methodology was developed for following rapidly small changes of the ellipsometric parameters Δ 0 and ψ 0 and of the reflectivity necessary for the unique determination of n = n − i k and thickness of a surface film.
46 citations
TL;DR: In this article, the growth of ∼ 10 to 100 A thick, orthorhombic PbO layers on lead was investigated by ellipsometry, electron tunneling and X-ray diffraction.
44 citations
TL;DR: In this article, the optical constants of bismuth were determined in the visible spectrum by ellipsometry, in the first instance with light reflected from the air-bismuth interface of films of this material vacuum-deposited onto glass and mica substrates.
42 citations
TL;DR: In this article, the theory and outline of the basic instrument and modifications which have been employed to increase the sensitivity of the method are described and an indication is given of the application to thickness measurement and optical constants for absorbing and non absorbing media.
Abstract: Ellipsometry is a technique which is suitable for the examination of thin films of materials and surface layers. The paper gives the theory and outline of the basic instrument and the modifications which have been employed to increase the sensitivity of the method. An indication is given of the application to thickness measurement and optical constants for absorbing and nonabsorbing media.
38 citations
TL;DR: In this paper, a modified Jones calculus, capable of handling the difficulties peculiar to computer analysis of polarization-modulation ellipsometry, is developed, which is used to identify, and compensate for, the effects of a partially polarizing detector upon one of the signals monitored in the system of perfect components.
Abstract: The difficulties involved in the analysis of systematic errors in polarization-modulation ellipsometry are greater than those met in the simpler static case. The complexity of the expressions involved in such an error analysis requires the use of computer techniques. The theory of polarization-modulation ellipsometry for systems of perfect components is presented in terms of the Jones calculus. A modified Jones calculus, capable of handling the difficulties peculiar to computer analysis of polarization-modulation ellipsometry, is developed. Examples are given to illustrate the construction of matrices in this modified calculus, which are appropriate to various typical imperfect components. As an application, the modified calculus is used to identify, and compensate for, the effects of a partially polarizing detector upon one of the signals monitored in polarization-modulation ellipsometry.
37 citations
TL;DR: In this article, the behavior of an anisotropic surface with an optic axis in the plane of the surface when examined by ellipsometry is described and a method of calculation of the reflection properties and the null settings of the polarizer and analyzer for a conventional ellipsometer is described.
Abstract: The behavior of a uniaxial anisotropic surface with an optic axis in the plane of the surface when examined by ellipsometry is presented. A method of calculation of the reflection properties of the surface and the null settings of the polarizer and analyzer for a conventional ellipsometer is described and shown to apply to experimentally measured surfaces. The measured values of the null settings are determined as a function of angle of rotation about a normal to the sample surface. The measured parameters are shown to give results that would be in error if the surface were assumed to be isotropic.
27 citations
TL;DR: In this paper, the thickness of the tunneling barrier of Al and Pb junctions was determined using an automated ellipsometer, and it was shown that tunneling resistance depends exponentially on the barrier thickness.
24 citations
TL;DR: In this article, a treatment of ellipsometry is presented for anisotropic films (uniaxial or biaxial) deposited on an optically absorbing substrate, based on Schopper's theory.
01 Dec 1973
TL;DR: A computer-controlled ellipsometer was used to detect and measure the increase in thickness, the decrease in refractive index and the development of birefringence which occur on applying fields up to a few hundred MV m −1 to anodic oxide films made in dilute sulphuric acid on tantalum as discussed by the authors.
Abstract: A computer-controlled ellipsometer was used to detect and measure the increase in thickness, the decrease in refractive index and the development of birefringence which occur on applying fields up to a few hundred MV m ‒1 to anodic oxide films made in dilute sulphuric acid on tantalum. The films were shown to be optically isotropic and homogeneous at zero field but to be optically anisotropic with field applied. There is a rapid change in index and thickness when a field is first applied, followed by a slower change with relaxation time of the order of 10 s. Both the index and the thickness changes are quadratic in the field, as is to be expected for a material which is isotropic with no field applied.
TL;DR: In this paper, an ellipsometric measurement of the refractive index and absorption coefficient of vacuum-evaporated perylene films is reported for the wavelength range 0.35 μm ≤ λ ≤ 0.7 μm.
Abstract: Ellipsometric measurements of the refractive index and absorption coefficient of vacuum-evaporated perylene films are reported for the wavelength range 0.35 μm ≤ λ ≤ 0.7 μm. An independent determination of refractive index at one wavelength by a critical-angle measurement allows calculation of both optical constants as well as the film thickness from the ellipsometer data. The principal features of the wavelength dependence of the film absorption are a broad maximum around 0.5 μm, a weak peak from 0.41 − 0.45 μm, and a strong edge at 0.375 μm. Each of these features corresponds to a peak in the crystal absorption spectrum measured by Hochstrasser.
TL;DR: In this article, the principles of ellipsometry are discussed and a discussion of a usual ellipsometric apparatus can be found in the subsequent section, along with a detailed analysis of two investigations made at this laboratory.
Abstract: This paper deals with the principles of ellipsometry. Definitions and some formulae are given in the introduction, while a discussion of a usual apparatus can be found in the subsequent section. The ellipsometric method is illustrated by two investigations made at this laboratory.
TL;DR: In this article, the authors describe an investigation of the adsorption of organic vapours on the faces of gold contacts in which it was essential to maintain experimental conditions as close as possible to those of actual works practice.
Abstract: Ellipsometry is an elegant and sensitive method for the study of surface films. This article outlines the technique and describes an investigation of the adsorption of organic vapours on the faces of gold contacts in which it was essential to maintain experimental conditions as close as possible to those of actual works practice.
01 Jun 1973
TL;DR: In this article, the authors present a method for the characterization of an absorbing surface film (i.e., determination of its complex refractive index and thickness) from measured changes in the ellipsometric parameters Delta sub 0 and Psi sub 0, and in the relative reflectivity.
Abstract: : The general theory of reflection and of ellipsometry is reviewed. The new technique of scanning ellipsometry, which allows a conventional ellipsometer to be used to follow film growth dynamically, is described. A program is given which allows the characterization of an absorbing surface film (i.e., determination of its complex refractive index and thickness) from measured changes in the ellipsometric parameters Delta sub 0 and Psi sub 0 and in the relative reflectivity. The method is illustrated by an examination of the electrochemical formation of the anodic oxide film on platinum. (Author)