Showing papers on "Ellipsometry published in 1977"
Book•
01 Jan 1977
TL;DR: In this article, the polarization of light waves and propagation of polarized light through polarizing optical systems are discussed. But the authors focus on the application of ellipsometry in the field of measurement in ellipsometer systems.
Abstract: Preface. 1. The polarization of light waves. 2. Propagation of polarized light through polarizing optical systems. 3. Theory and analysis of measurements in ellipsometer systems. 4. Reflection and transmission of polarized light by stratified planar structures. 5. Instrumentation and techniques of ellipsometry. 6. Applications of ellipsometry. Appendix. Author index. Subject index.
4,634 citations
TL;DR: In this paper, the interaction of methane with Ni(110) was studied with AES, LEED and ellipsometry, and the carbon coverages were derived from Auger spectra by calibration with ellipsetry.
118 citations
TL;DR: Azzam and Bashara as mentioned in this paper presented an ellipsometry and polarized light for the first time in the context of polarizing light and ellipsology. Pp. xvii + 529.
Abstract: Ellipsometry and Polarized Light. By R. M. A. Azzam and N. M. Bashara. Pp. xvii + 529. (North-Holland: New York, Amsterdam and Oxford, 1977.) Dfl.180; $37.50.
101 citations
TL;DR: In this paper, the Fourier reflection coefficients of a phase boundary disturbed by values of the optical constants differing from the values in the adjacent phases (boundary phase) are derived on the basis of Maxwells' theory using integral boundary conditions.
45 citations
TL;DR: Experimental results on float glass by recent analytical techniques as discussed by the authors support the conclusion that tin from a metal bath penetrates with relatively high concentration only in the first few nanometers from the surface.
Abstract: Experimental results on float glass by recent analytical techniques — ESCA, photon emission induced by ion bombardment and ellipsometry — support the conclusion that tin from a metal bath penetrates with relatively high concentration only in the first few nanometers from the surface.
36 citations
TL;DR: The effect of low-energy ion bombardment on the surface structure of Ag(111) and on the reactivity towards oxygen has been investigated by ellipsometry and LEED.
35 citations
TL;DR: It is shown that ellipsometry is capable of providing information on molecular dimensions, molecular diffusion velocities and adsorption rates.
Abstract: The adsorption of bovine serum albumin and the subsequent reaction with it of rabbit anti-bovine serum albumin at a saline solution/gold interface are observed in vitro by ellipsometry. By suitable choice of protein concentrations, the processes of adsorption and immunological reaction can be followed in detail by an ordinary null ellipsometer. A simple kinetic model for the formation of a monolayer of protein at the saline solution/gold interface provides adequate explanation for the experimental results. It is shown that ellipsometry is capable of providing information on molecular dimensions, molecular diffusion velocities and adsorption rates.
35 citations
Journal Article•
22 citations
TL;DR: 6-microm ellipsometric measurements, using a modulated light ellipsometer, are reported for the refractive imdies of KCL, CdTe, and Zn Se crystals and for ZnSe and ThF(4) films.
Abstract: 10.6-μm ellipsometric measurements, using a modulated light ellipsometer, are reported for the refractive indices of KCl, CdTe, and ZnSe crystals and for ZnSe and ThF4 films.
21 citations
TL;DR: In this paper, an ellipsometry-based method for measuring radiation damage in gallium-phosphide layers has been used to examine the complex index of refraction due to implanted gallium fluence.
Abstract: Ion‐implanted gallium‐phosphide layers have been examined by ellipsometry. This technique provides a nondestructive means of measuring radiation damage. The index of refraction increases with ion dose except when ion‐beam‐radiation annealing causes a decrease in the extinction coefficient. A marked difference is observed in radiation‐damage annealing between light and heavy ions. A computer calculation was performed to investigate the variation in the complex index of refraction due to implanted‐ion fluence; agreement with experimental data was obtained.
20 citations
TL;DR: In this article, the amplitude of light waves reflected and scattered from a rough surface in the medium where the light beam is incident is shown to be also applicable to the other medium.
Abstract: A theory previously used for computing the amplitude of light waves reflected and scattered from a rough surface in the medium where the light beam is incident is shown to be also applicable to the other medium. Furthermore it can be extended to approximations higher than the first order. As an example the formulae used in ellipsometry of very thin films are found. The amplitude of waves excited by a periodical surface structure in any direction is determined as well as its second order effect on both reflected and transmitted light. Computations are made for an arbitrary polarisation and an arbitrary incidence of the beam. Mean amplitude surface waves are considered in the case of high spatial frequency.
TL;DR: In this article, it was shown that the changes in the ellipsometric parameters are caused by surface roughness which in turn is strongly related to the sublimation of silicon during heating.
TL;DR: The basic principles of ellipsometry and the application of the technique to the examination of surfaces both in air and in vacuo have been discussed in this article, where the effects on a surface of adsorbed gases, corrosion layers, roughness, anisotropy and radiation damage are given.
TL;DR: In this paper, a simple form of the apparatus is described and the method of determination of optical constants, n and k, discussed, and comparisons made between calculated spectral reflectivities and experimental observations for electrodeposited black nickel films on copper substrate are made.
TL;DR: A phenomenological description of the effect of sample imperfection in wavelength-scanning polarization-modulation ellipsometry (WSPME) is presented in this article, where a simple experimental method analogous to zone-averaging is described whereby error induced by both sample and apparatus imperfections can be reduced.
TL;DR: In this paper, a colorimetric analysis of interference colors, produced by thin films on electrodes, has been shown that optimum angles of incidence exist for the observation of interference colours with polarized light.
TL;DR: In this paper, an infrared ellipsometer was developed to measure the thickness of oxides produced by anodization of aluminum with production-finished surfaces using a low power CO 2 laser and using a 6328 A beam from a He-Ne laser for alignment and location of the measurement region.
TL;DR: In this paper, a description of measurements of the repassivation kinetics of bare surfaces, changes in the passive film prior to brackdown and changes in a crevices that lead to crevice corrosion is given.
Abstract: Because corrosion processes involve localized effects in thin passive layers and because these processes lead to surface roughening, it is virtually impossible to do quantitative ellipsometry at todays theoretical and experimental state of the art. This paper, therefore, describes qualitative apparatus that provide valuable insights into corrosion processes without attempting to determine optical constants or exact measures of film thickness. A description is given of measurements of the repassivation kinetics of bare surfaces, changes in the passive film prior to brackdown and changes in a crevices that lead to crevice corrosion.
TL;DR: The techniques of ellipsometry, or surface optical spectroscopy, are nondestructive and can make a valuable contribution to surface studies in their own right and together with other techniques such as ESCA, electron reflection and transmission microscopy.
Abstract: The techniques of ellipsometry, or surface optical spectroscopy, are nondestructive and can make a valuable contribution to surface studies in their own right and together with other techniques such as ESCA, electron reflection and transmission microscopy. The author describes the principles and how they can be used to practical effect in situations ranging from fibre optics to immunology
IBM1
TL;DR: In this paper, an ellipsometry was used to monitor changes in the films thickness and refractive index that took place as a direct result of being irradiated with argon ions with energies ranging from 40 to 500 keV and ion fluences from 5xl013 to 1x1016 ions/cm2.
Abstract: Thin films (~1000 to 7000A) of SiO2 were prepared by several methods of the thermal oxidation of single crystal silicon substrates. The films were irradiated with argon ions with energies ranging from 40 to 500 KeV and ion fluences from 5xl013 to 1x1016 ions/cm2. Ellipsometry was used to monitor changes in the films thickness and refractive index that took place as a direct result of being irradiated. Confirmation of some of the ellipsometric measurements was established with the use of an interference microscope. In addition, infrared spectroscopy was utilized to observe possible changes in the Si-0 stretching vibration (~9μm) that may result due to the irradiation. Expansion of the thin films was found to depend on how the films were prepared. “Ultradry” oxides (<1ppm H2O) and HCl grown oxides were found to expand upon implantation with a decrease in refractive index; however wet grown oxides (~10,000ppm H2O) and Na contaminated steam grown oxides were found to remain essentially unchanged to within the experimental accuracy of about 2 percent. Also, infrared analysis showed that the Si-O stretching vibration (~9μm) shifted ~50cm-1 to lower energy in the case of the former films, while in the latter films, using identical implant conditions, the shift was reduced by approximately 50 percent. Post-implantation annealing at the SiO2 films’ preparation temperature restores the films to their original condition. Density measurements, performed on the as prepared, thin SiO2 films, revealed that the density of the original films varied according to their method of preparation.
TL;DR: SiO2 pyrolitic films are studied by ellipsometry, transmission electron microscopy (TEM), and electron diffraction techniques during the condensation the films are shown densified starting from interface by a heterogeneous mechanism which results in the formation of more porous layer near the film surface Between the SiO2 film and Ge substrate a region with higher concentration of GeO2 appears Synthesized in oxygen flow this region is hundreds Angstroms thick and a phase separation occurs All the films have dome-like defects as potential centres of spherulite crystallization as discussed by the authors.
Abstract: SiO2 pyrolitic films are studied by ellipsometry, transmission electron microscopy (TEM), and electron diffraction techniques During the condensation the films are shown densified starting from interface by a heterogeneous mechanism which results in the formation of more porous layer near the film surface Between the SiO2 film and Ge substrate a region with higher concentration of GeO2 appears Synthesized in oxygen flow this region is hundreds Angstroms thick and a phase separation occurs All the films have dome-like defects as potential centres of spherulite crystallization On the interface polycrystalline diamond-like germanium and in some cases the germanium high pressure phase, Ge III, is found
[Russian text Ignored]
19 Oct 1977
TL;DR: In this article, a self-compensating ellipsometer was used to observe the electro-chemical formation of reacted surface layers in any optically transparent environment and the optical effect of mass-transport boundary layers and component imperfections were taken into account in the interpretation of results.
Abstract: The measurement of changes in the state of polarization of light due to reflection provides an unusually sensitive tool for observing surface layers in any optically transparent environment. A fast, self-compensating ellipsometer has been used to observe the electro-chemical formation of reacted surface layers. The optical effect of mass-transport boundary layers and component imperfections have been taken into account in the interpretation of results.© (1977) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
19 Oct 1977
TL;DR: In this article, the authors explored the possibility of using ellipsometry to study the electronic surface structure of silver iodide by making the ellipsometric measurements at one unchanging wavelength while illuminating the film with light of varying wavelength.
Abstract: Ellipsometric measurements are affected by the electron population in surface states. This creates difficulities when studying adsorption, but also presents the experimenter with another way of studying these states. We have explored the possibility of using ellipsometry to study the electronic surface structure of silver iodide by making the ellipsometric measurements at one unchanging wavelength while illuminating the film with light of varying wavelength and observing the resulting changes in the ellipsometric parameters. Previous ellipsometric studies of surface states have not made use of the second light source. Our results indicate that this method is practical and also indicate that care must be taken when using ellipsometry to study adsorption reactions when other light sources also illuminate the surface.
Dissertation•
01 May 1977
Abstract: Abstract : The properties of oxide layers on smooth and rough aluminum surfaces are considered in this study. Using ellipsometric techniques, the layer thickness and the four parameters describing the complex indices of refraction for film and substrate are assigned effective values and interrelations are deduced. The organizing feature of the work is the use of data trajectories generated by determining the ellipsometric parameters Psi and Delta over and over for samples that were heated between measurements. The heating caused increases in the oxide layer thickness, so that the data trajectories could be used along side theoretical thickness curves to determine appropriate effective media parameters. One of the more interesting results was the representation of rolling grain marks on alclad by an effective complex index of refraction. The effective index determined was dependent on the sample orientation. (Author)
TL;DR: In this article, it was shown that the mode of development of the oxide prior to pore initiation is similar to that of barrier anodic oxides and that the efficiency of oxide growth and the electric field required to pass a given ionic current,, are generally lower and approach values for barrier oxides (of thin film and bulk Al) only at high current densities.
Abstract: Ellipsometry studies of evaporated aluminum films anodized in at constant current indicate that the anodic oxide produced is at first homogeneous with a refractive index of 1.62, as found for barrier anodic oxide of thin film and bulk Al. As the thickness increases, the optical properties change signifying the onset of pore formation. This occurs at increasing thicknesses with increasing current density, however, pore formation always occurs well before the peak in voltage is reached at constant current. Ellipsometry indicates that the mode of development of the oxide prior to pore initiation is similar to that of barrier anodic oxides. However, the efficiency of oxide growth and the electric field required to pass a given ionic current, , are generally lower and approach values for barrier oxides (of thin film and bulk Al) only at high current densities. The curvature of the curve is in the opposite sense to that normally observed for anodic oxides and it is interpreted in terms of cation and anion motion. After pore formation the efficiency of oxide growth increases and becomes near unity when steady‐state formation conditions are reached. These results appear consistent with the model that dissolution at the pore bases is an electric field‐aided process.