Showing papers on "Insulated-gate bipolar transistor published in 1977"
01 Jan 1977
TL;DR: In this article, a complementary pair of high power MOSFETs was developed, each of which has a drain breakdown voltage as high as 200V and 10A current capabilities.
Abstract: A complementary pair of high power MOSFETs is developed, each of which has a drain breakdown voltage as high as 200V and 10A current capabilities. This device has an offset gate and an ion-implanted additional channel to realize this high breakdown voltage. The device structure including the use of a field plate, is optimized by two dimensional MOS analysis. This design and a highly refined polysilicon gate fabrication process contribute to the realization of the high power devices. Measurement of these devices reveals superior thermal characteristic and assures a larger ASO than that of conventional bipolar transistors of the same chip size.
11 citations
TL;DR: A new `black-box' approach to the measurement of nonlinear 2-ports is presented, based on the simultaneous application of two signals at the same frequency to the input and output ports.
Abstract: A new `black-box' approach to the measurement of nonlinear 2-ports is presented. This is based on the simultaneous application of two signals at the same frequency to the input and output ports. The measured characteristics of three transistors are used to predict their performances as class-C microwave power amplifiers. The transistors are then used in practical realizations of the amplifiers. Predicted and measured results are compared.
9 citations
TL;DR: A 100 watt audio amplifier was recently developed using a new Power MOSFET which was developed by the MOS Device Group as discussed by the authors, it has good frequency response, no carrier storage delay, thermal stability, no secondary breakdown and high input impedance.
Abstract: A 100 watt audio amplifier was recently developed using a new Power MOSFET which was developed by our MOS Device Group. The Power MOSFET has several advantages over bipolar transistors. It has good frequency response, no carrier storage delay, thermal stability, no secondary breakdown and high input impedance.
8 citations
TL;DR: A circuit analysis program based on a piecewise-linear approach, simulates the time responses of circuits in which the transistors are imbedded, and yields overall circuit responses with fabrication data as input.
Abstract: Dynamic models of double diffused bipolar transistors are generated from device fabrication data. The models consist of interconnections of two- and three-terminal resistors and capacitors whose characteristics are expressed in the form of tabulated values describing piecewise-linear surfaces. A circuit analysis program based on a piecewise-linear approach, simulates the time responses of circuits in which the transistors are imbedded. DC and small-signal AC analyses are also obtained. The computer program package thus yields overall circuit responses with fabrication data as input.
7 citations
Patent•
24 Mar 1977TL;DR: In this article, a three JFET switch with a first transistor when turned on is utilized to pass an input voltage to an output, and a second and third transistor having their gates commoned with the first transistor to form a turn on circuit.
Abstract: In a three JFET switch, a first transistor when turned on is utilized to pass an input voltage to an output. The first transistor is turned on by a second and third transistor having their gates commoned with the first transistor to form a turn on circuit. In its idle state, when the switch is off, a drain circuit conducts through the third transistor, dissipating power. In order to reduce the size of the second and third transistors and hence the power dissipated while maintaining a fast switching speed a bipolar transistor and a fourth JFET are utilized to amplify the drain current of the third transistor for discharging the common gate capacitance of the switch. This allows the second and third transistors to be made small since their current need not be large for high speed switching. Furthermore, the bipolar transistor only turns on during the transition from the open to closed state of the switch and therefore its conduction does not contribute to the quiescent power consumption of the circuit.
7 citations
IBM1
TL;DR: In this paper, a mathematical model is utilized to predict the safe operating area (SOA) for proper circuit applications of bipolar transistors in the forward as well as reverse operating regions, where nonuniformity of the temperature within the transistor structure due to internal self-heating and the avalanche multiplication effect in the reverse operating region, which causes second breakdown failure, are taken into account.
Abstract: A mathematical model is utilized to predict the safe operating area (SOA) for proper circuit applications of bipolar transistors in the forward as well as reverse operating regions. Nonuniformity of the temperature within the transistor structure due to internal self-heating and the avalanche multiplication effect in the reverse operating region, which cause second breakdown failure, are taken into account. Steady-state electrical and time-dependent thermal problems are solved to establish stability of a specified operating condition. Safe operating area curves for three transistor designs of similar power handling capability are presented. Current density and temperature distributions within the transistor structure for various operating conditions in the stable as well as unstable regions are presented. Suitability of VBE to estimate peak temperature within the device is discussed.
3 citations
TL;DR: In this article, it was shown that common-base amplifiers should be more likely to suffer from this problem than common-emitter amplifiers and controlled experiments could provide definitive information as to the effects on the transistor of such operation.
Abstract: RF power amplifier circuits other than Class A have a previously unreported operating characteristic which can cause emitter-base reverse breakdown once each RF cycle. The breakdown is not necessarily observable at the external terminals of the transistor; it can be deduced from the observed emitter-base terminal voltage and base current and the transistor internal lead inductances and junction capacitances. Certain symptoms of RF power transistor deterioration and failure reported by other workers appear to be consistent with the possible effects of such repetitive breakdowns. Common-base amplifiers should be more likely to suffer from this problem than common-emitter amplifiers. Transistor specialists disagree in their predictions of whether such operation would damage the RF power transistor. Controlled experiments could provide definitive information as to the effects on the transistor of such operation.
2 citations
01 Jan 1977
1 citations
TL;DR: The modeling and utilization of an inverted integrated n-p-n transistor as a controllable small-signal resistance and the application of this device to a programmable attenuator circuit is discussed and attenuation and harmonic distortion data are presented.
Abstract: The modeling and utilization of an inverted integrated n-p-n transistor as a controllable small-signal resistance is explored. A theoretical relation for inverse transistor saturation resistance is developed using a modified Gummel-Poon (G-P) model, and the results are compared to experimental measurements. The relation of inverse beta to the inverse saturation resistance is derived and modeled, as well as the effect of base charge, and bulk resistance. The factors governing the matching of saturation resistance between devices on the same chip and from lot-to-lot are investigated and compared to matching measurements. A noise model for the saturated inverted device is developed and noise measurements appear to confirm the model's validity. Finally, the application of this device to a programmable attenuator circuit is discussed and attenuation and harmonic distortion data are presented.
1 citations
01 Jan 1977
TL;DR: In this article, a three-stage transistor amplifier utilizing a bipolar transistor, which can deliver 12W output power at 4 GHz, is described, exhibiting power gain of l l l3dB, power added efficiency of 17%, and can operate with a 20V dc power supply.
Abstract: A HIGH-POWER three-stage transistor amplifier utilizing a bipolar transistor, which can deliver 12W output power at 4 GHz, will be described. The amplifier, exhibiting power gain of l l l3dB, power added efficiency of 17%, and can operate with a 20-V dc power supply, contains seven units of a 3-W bipolar transistor, fabricated with self-aligned electrode formation technology’. Figure 1 shows the block diagram of the amplifier circuit. Each transistor amplifier segment contains input and output matching networks of the microstripline type, and is connected to the power combiner/divider of a double section 3dB quarter wavelength hybrid. Teflon glass-fiber substrates have been used for the matching networks and for the hybrid couplers. In Figures 2 (a) and (b) RF performance characteristics i.e., output power, efficiency and AM-PM conversion coefficient versus input power, and output power versus frequency characteristics at different ambient temperatures are shown. The noise loading characteristics are also satisfactory.
1 citations
Proceedings Article•
01 Sep 1977
TL;DR: This paper describes the development of a laser driver using bipolar microwave transistors in which switching times under 200 ps have been achieved, corresponding to a return-to-zero bit rate in excess of 1 Gbit/s.
Abstract: This paper describes the development of a laser driver using bipolar microwave transistors in which switching times under 200 ps have been achieved, corresponding to a return-to-zero bit rate in excess of 1 Gbit/s. Computer simulation was used to optimize the switching speed and stability of the circuit. The driver is matched to 50 ohm and accepts standard ECL level signals.
01 Jan 1977
TL;DR: In this paper, the EBERS-MOLL equation was used to evaluate the no-ear divergence in bipolar transistor amplifiers and the results of the evaluation were compared to measured linear equations.
Abstract: USING EBERS-MOLL EQUATIONS TO EVALUATE THE NO I EAR DISTORTION IN BIPOLAR TRANSISTOR AMPLIFIERS by Amanollah Khosrovi e ersoll model , which is applicable to static o a ic cond"tions , is used as a basis for 0 , 0 0 a ~ p l e ethod for the evaluation of harmonic enerated in bipolar transistor amplifiers . eq ations are transformed into the desired ac aurin Series expansion . A computer •tte to provide numerical results of the t ese predictions are compared to measured ·al es. ACKNOWLEDGEMENTS I _.is to acknowledge Dr . R. L. Walker for his i ce d advisement in reviewing this research r e 0 I 0 i to extend thanks to my committee members • • E i c on and Dr . B. E . IVlathews . I am especially 0 • E . . ·a heMS for his assistance and e co 0 au e entire school program .
TL;DR: In this article, a parallel combination of a Zener diode and an inductor was used to reduce the peak power of a switching transistor that reverse biases a p-i-n diode load.
Abstract: Describes techniques for reducing the peak power of switching transistor that reverse biases a p-i-n diode load. Particular emphasis is placed on a parallel combination of a Zener diode and an inductor and it is shown that, for an experimental p-i-n driver, the peak power is reduced from 252 to 90 W.
TL;DR: A simple but efficient analog computer which has been specially developed for the transient analysis of nonsaturated bipolar transistor circuits, allowing a fast man-machine dialog.
Abstract: This article describes a simple but efficient analog computer which has been specially developed for the transient analysis of nonsaturated bipolar transistor circuits. Its advantages, when compared to the usual digital computer simulation, are low costs, simple operation, and short simulation time, allowing a fast man-machine dialog. This simulation method has already been successfully used in the design of several high-speed integrated circuits.