Showing papers on "Insulated-gate bipolar transistor published in 1990"

An investigation of the drive circuit requirements for the power insulated gate bipolar transistor (IGBT)

Abstract: The drive circuit requirements of the OGBT are explained with the aid of an analytical model. This model can be used to describe the turn-on and turn-off, gate and anode, current and voltage waveforms for general external drive, load, and feedback circuits. It is shown that nonquasi-static effects limit the influence of the drive circuit on the time rate-of-change of the anode voltage. Model results are compared with measured turn-on and turn-off waveforms for different drive, load, and feedback circuits and for different IGBT base lifetimes. The effective output capacitance of the IGBT at turn-off is several orders of magnitude larger than that of the structurally equivalent power MOSFET and depends upon the device base lifetime because the base charge at turn-off depends upon the device base lifetime. However, the gate drain feedback capacitance is unchanged from the value for the structurally equivalent power MOSFET. Thus, the minimum gate resistance that influences the anode voltage rate-of-rise at turn-off is several orders of magnitude larger than that for the power MOSFET and varies with device base lifetime. >

A high switching frequency IGBT PWM rectifier/inverter system for AC motor drives operating from single phase supply

Abstract: A PWM (pulse width modulation) rectifier/inverter system using IGBTs (insulated-gate bipolar transistors), capable of switching at 20 kHz, is reported. The base drive circuit for the IGBT, incorporating short circuit protection, is presented. The inverter uses an Undeland snubber together with a simple energy recovery circuit, which ensures reliable and efficient operation even for 20 kHz switching. The front end for the system is a regenerative single-phase full-bridge IGBT inverter along with an AC reactor. The steady-state design considerations are explained, and control techniques for unity power factor operation and fast current control of the front end converter, in rotating as well as stationary reference frames, are discussed and compared. Results from computer simulations and experimental results for a 1.5 kW prototype system using GE type 6E20 IGBTs are presented. >

An induction motor drive using an improved high frequency resonant DC link inverter

Abstract: An induction motor drive using an improved high-frequency resonant DC link inverter is presented. The resonant circuit was systematically analyzed first to establish the criteria for initial current selection, and a new circuit was then proposed to establish the bidirectional initial current. The proposed current initialization scheme solves voltage overshoot and zero-crossing failure problems in the ordinary resonant DC link inverters. A three-phase 3 kW IGBT (insulated-gate bipolar transistor) based 60 kHz resonant link inverter has been constructed and successfully tested with an induction motor drive. The speed control system is implemented using two microprocessors: TMS320C25 for computation and INTEL 80386 for monitoring and user interface. Experimental results showing the superior operation of the proposed resonant DC link inverter drive are presented. >

Interconnection system with single phase IGBT PWM CSI between photovoltaic arrays and the utility line

Abstract: The single-phase utility interactive photovoltaic (PV) system, including the insulated-gate bipolar-transistor (IGBT) current-source pulse-width modulation (PWM) inverter with two auxilliary IGBTs is described. The system configuration, its operation, and experimental results which include steady-state characteristics with waveforms are presented. It is shown that the system can supply a utility with maximum power corresponding to the insolation with sinusoidal current waveforms at unity power factor. The modulation index and firing angle are fixed, and there is no need for feedback control. In case of emergency, the system can be instantaneously disconnected from the utility line by turning off all the main IGBTs. Simultaneously, the two auxiliary IGBTs are turned on to let the DC current circulate through these IGBTs, the PV array, and the DC reactor. >

Bridge type power converter with improved efficiency

Abstract: In a bridge type power converter, one of series-connected semiconductor elements of an inverter bridge is constituted by an MCT having a low-loss characteristic, or substantially constant-voltage characteristic, with a small voltage drop under conduction, and the other semiconductor element is constituted by an IGBT having a constant-current characteristic with a current suppressed in accordance with a drive signal. A failure current is suppressed by a current-suppressing effect of the IGBT and safely interrupted by turning off the MCT and the IGBT.

Switching circuit employing electronic devices in series with an inductor to avoid commutation breakdown and extending the current range of switching circuits by using igbt devices in place of mosfets

Abstract: A switching circuit is provided which is to be connected to a power source. The circuit includes a first device, an inductor and a second device, all connected in series. Either a single inductor or a pair of series-connected inductors is connected in series between the first and second devices. One or both of the first and second devices are switched on and off to supply a load with an output voltage. The circuit can also include diodes to prevent harmful reverse current flow and to provide bypasses around the first and second devices. The first and second devices can be semiconductor elements, such as FETs, and particularly MOSFETs. The first device can be an IGBT.

2 kJ/s, 25 kV high frequency capacitor charging power supply using MOSFET switches

Abstract: A 2 kJ/s, 25 kV (Model CCDS-225) high frequency, capacitor charging power supply combining resonant technology and pulsewidth modulation has been developed. The power supply charges a capacitor to 25 kV at a rate of 2 kJ/s, and has a regulation of 90%. The HVPS is composed of the following modules: input power rectification and filtering, series resonant inverter, high-voltage transformer and rectification, control, and inverter drive. Using state-of-the-art MOSFET or IGBT (insulated-gate bipolar transistor) switches, the series resonant inverter operates at a frequency of approximately 50 kHz. The use of MOSFETs or IGBTs allows the HVPS to use a unique pulsewidth modulation control scheme for the resonant inverter. A proprietary control scheme and the 50 kHz resonant frequency makes it possible to achieve regulation better than 0.1% for load frequencies up to 2 kHz. In addition to superior regulation for high load frequencies, this unique control approach prevents the supply from being damaged if it is accidentally operated into an open circuit. The design of the power supply is described. >

A 2000 V-non-punch-through-IGBT with dynamical properties like a 1000 V-IGBT

Abstract: A 2000-V IGBT (insulated-gate bipolar transistor) based on the simple concept of the non-punch-through IGBT is presented The devices were processed on bulk silicon material without any lifetime-killing steps On-state voltage and turn-off losses are nearly the same as for 1000-V IGBTs The forward-bias safe-operating area of the devices is a rectangle up to 1800 V; no latchup occurs up to the short-circuit saturation current >

Power semiconductor device models for use in circuit simulators

Abstract: The publicly available power semiconductor device models are surveyed, their performances are compared, and recommendations for specific simulation applications are presented. It is shown that the accurate models available for the power BJT and MOSFET often cannot run on the same simulators, power transistor models are more completely developed than thyristor models, and no suitable power rectifier model exists that can produce accurate switching waveforms. >

MOS-controlled bipolar power semiconductor component

Abstract: In an MOS-controlled bipolar power semiconductor component, a recombination layer (10), which is doped with the same polarity as the base layer but more highly, is inserted, starting with the structure of an IGBT, into the base layer between anode (A) and cathode (K), which recombination layer divides the base layer into an upper and lower base layer (7a and 7b, respectively). The resultant structure forms a series circuit of MOSFET (T) and PIN diode (D) which is free of latch-up and provides the possibility of higher blocking voltages.

Insulated gate bipolar transistor circuit with overcurrent protection

Abstract: A semiconductive device integrated on a single chip and adapted for self-protecting use in control applications, including an insulated gate bipolar transistor (IGBT) useful as a series controller for a load. In the event of a load failure (short), the upward current excursion is inhibited by a control arrangement in which a sensing resistor in the emitter circuit of the IGBT turns on a three-terminal signal shunt across the signal control path of the IGBT. The signal shunt includes a voltage dropping element such as a Zener diode and may also include Zener reverse-voltage protection. The sensing resistor may be placed in the low-current branch of a split-emitter current path of the IGBT. A pulsed constant-amplitude driving signal may be applied to the control signal path of the IGBT through serially-connected NPN and PNP bipolar transistors providing a common driving node connected through a serial impedance to the control signal path of the IGBT and to the signal shunt.

High speed, high current capacity LIGBT and diode for output stage of high voltage monolithic three-phase inverter IC

Abstract: Structure of a high speed, high current capacity Latelal Insulated Gate Bipolar Transistor (LIGBT) and a diode for a 250V1A monolithic three-phase inverter IC are studied. A hybrid structure between Schottky junctions and pn junctions is effective for the diode, but not for the LIGBT. Characteristics of the IC using the LIGBT and diode are also presented.

Parallel circuit module including a diode and an IGBT

Abstract: In a module using a high-speed switching element such as an IGBT for a high-speed inverter, a matching condition is established between the switching characteristic of the IGBT and the recovery characteristic of the diode to be connected thereto in an anti-parallel fashion. As a result, the oscillating voltage appearing in the inverter circuit is suppressed to prevent erroneous operation of the inverter system.

Switchgear for switch-on and switch-off

Abstract: Switchgear for switching on and off, having a high switching frequency for the purpose of inverting an electrical variable, connected to a transformer or motor, has a driver for switching MOS-FET semiconductors (17, 18), which are connected in parallel, and IGBT power semiconductors (15, 16), the MOS-FET semiconductors (17, 18) being largely frequency-independent and operating over a considerable voltage range, the IGBT power semiconductors (15, 16) operating in a higher frequency band. In this case, the power semiconductors are designed for differently dimensioned frequency bands. They have different characteristics for current and voltage values, forward power losses and also switching losses.

Nanosecond switching using power MOSFETs

Abstract: It is shown that using the secondary breakdown effect of a bipolar transistor, often called an avalanche transistor, the large input capacitance of a power MOSFET may be charged very quickly. A power MOSFET driven by an avalanche transistor is used to generate electrical pulses of >800 V into 50 Ω with rise times of approximately 3 ns. The output pulse amplitude can be varied by adjusting the drain‐source voltage of the power MOSFET. The trigger delay of this circuit is approximately 5 ns, with jitter of <100 ps. This circuit has been used to generate pulses at a repetition rate of greater than 1 kHz.

Recent advances in insulated gate bipolar transistor technology

Abstract: Device design of the insulated gate bipolar transistor (IGBT) has been optimized to reduce the distributed transmission-line effect. In addition, cell geometry is chosen to yield high latchup current capability and low forward-voltage drop simultaneously. The vertical structure is optimized to enhance both the turn-off speed and the safe operating area of the IGBTs. The turn-off time of the n-IGBT has been shortened to be as low as 40 ns. The p-channel IGBT latchup current has been improved four to six times over the previously reported results through innovative design and processes. An open-base bipolar transistor model has been implemented to investigate transient IGBT characteristics. >

Protection circuit for use in semiconductor integrated circuit device

Abstract: A protection circuit is inserted between a signal input pad and an internal circuit. The protection circuit includes a parasitic bipolar transistor which is obtained by forming high-impurity concentration semiconductor regions in the major-surface region of a substrate. In practice, it is hard to provide a parasitic bipolar transistor of a sufficiently large size, since the reduction of the size of a chip is a recent trend. With this in mind, a third semiconductor region serving as an electron-trapping region is formed in a region outside of the location where the parasitic bipolar transistor is formed. If an excessive voltage produced by ESD or the like is applied to the pad, and the excessive voltage uncontrollable by the parasitic bipolar transistor, the third semiconductor region absorbs the excessive voltage. In particular, where the current capacity of the parasitic bipolar transistor is small, the third semiconductor region reliably prevents electrostatic destruction of a circuit element. Accordingly, the protection circuit enables the parasitic bipolar transistor to be reduced in size, thus contributing to miniaturization of a chip. Moreover, the protection circuit is reliable in operation.

Comparative analysis of power bipolar devices

Abstract: A comparison between bipolar Darlington, insulated gate bipolar transistor (IGBT), bipolar mode field effect transistor (BMFET), and power MOS devices is presented based on an experimental investigation performed on devices with similar geometrical characteristics and blocking voltage capabilities. The main device characteristics (conduction characteristics, switching performances, power dissipation, power ratings, etc.) are presented and compared in order to obtain comprehensive guidelines for finding their fields of application. It is shown that, for higher frequency switching application, MOS devices are the most suitable, but they are very expensive in terms of silicon area used. For frequencies less than 20 kHZ, BMFETs have better performance than IGBTs in terms of power losses. On the other hand, the IGBT is a voltage-controlled device and thus has fewer problems with its driving circuit. >

Power semiconductor switching off method for switch protection - has discharge of switch capacitance before turn off only in overload conditions

Abstract: In operation a control voltage turns on the power semiconductor switch, and holds it conductive; upon its disappearance or polarity inversion the switch is turned off and blocked. Only in the event of overcurrent is the control voltage, necessary for switch-on, reduced so that a partial discharge of the input capacitance of the switch takes place, before the switch is turned off. A switch (53) is operated in the event of overcurrent to apply a voltage from a divider (RG1, RG2, R3, D2) in order to discharge the gate capacitance. USE - Protection of DMOS or IGBT switches.

Reverse phase angle control of A.C. power loads

Abstract: AC power loads such as from transformers, motors, high in-rush heaters, air conditioners, etc., are controlled by the use of bipolar transistors, FET transistors, gate turn-off SCRs and IGBT to turn on the load at zero-cross over and to turn off the load at any point in the sine wave which produces the desired amount of power. This reduces RFI and virtually eliminates di/dt at turn on since both voltage and current start at the same zero cross-over, and hence will improve the power factor. Both analogue and digital logic systems can also be utilized to produce this type of phase control, and a wide variety of possibilities are available such as serial and parallel input, the use of full wave bridge control, etc.

Field effect transistor-bipolar transistor darlington pair

Abstract: A high frequency amplifying device comprises a field effect transistor-bipolar transistor darlington pair. Such a device combines the main desirable features of both field effect transistors and bipolar transistors, therefore, having a high input impedance that is typical of FETs and a high transconductance (or high current gain) which is typical of bipolar transistors.

Driving circuit for static induced type self-arc extinction element and inverter device static induced type self-arc-suppressing element

Abstract: PURPOSE:To always decrease and interrupt and over-current and to prevent the element destruction by taking priority to the fact that a gate voltage is lowered to a prescribed value more than the stopping signal at a control side after the over-current is detected CONSTITUTION:The gate and collector of a static induced type self-arc extinction element IGBT 10 are connected through a resistance 11 and a diode 12 and the connecting point of the resistance 11 and the diode 12 is connected to the base of a transistor 15 An equivalent overcurrent detecting circuit to detect the collector voltage during the gate voltage impression is constituted at an IGBT 10 An overcurrent detecting signal is transferred to a control side by the transistor 15, the resistance 17, a diode 18 and a capacitor 19 and a gate voltage adjusting circuit is constituted To the emitter of the transistor 15, a resistance 20 and a capacitor 21 are connected, one side of the capacitor 21 is connected to the base of a transistor 23, the collector of a transistor 23 is the collector of a transistor 3 and an ON holding circuit is constituted Thus, when the overcurrent is detected, after the flow is surely decreased, the interruption can be performed

Snubber circuit for a power semiconductor device

Abstract: A snubber circuit, for absorbing voltage spikes applied to a power semiconductor device used as a switching means, utilizes the junction capacitance of a directly connected semiconductor device, thereby avoiding the need for a separate high-voltage capacitor. Embodiments shown use either a MOSFET or a bipolar transistor with a resistor connected in parallel between the gate (base) and the source (emitter) of the MOSFET (or bipolar transistor.) The snubber circuit of the present invention may also be a module integrally formed on a radiating base of the power semiconductor device.

Soft switch-avalanche IGBT convertor

Abstract: A full bridge dc-dc converter using a zero voltage and zero current switching technique is described. This circuit utilizes the characteristics of the IGBT to achieve power and frequency combinations that are much higher than those previously reported for this device. Experimental results are included for a 1.5 kW, 100 kHz converter with 94 percent efficiency.

High-performance EHA controls using an interior permanent magnet motor

Abstract: A controller for a high-performance electrohydrostatic actuator (EHA) using an interior permanent magnet (IPM) synchronous motor to produce servo motion is described. The buried-magnet design of the IPM motor yields desired characteristics such as high efficiency, robust rotor construction, and wide operating speed range. Power converter size is minimized by using insulated-gate bipolar transistor (IGBT) power switches combined with high-voltage integrated circuit (HVIC) gate drivers in phase-leg power modules. Experimental results for the demonstrator motor-controller hardware rated at 12 hp (continuous) are presented confirming the IPM motor drive's performance. >

Qualification of IGBT's and SIRET for high frequency inverter application

Abstract: New power devices — IGBT's and a bipolar transistor with cellular structure are investigated for applications in fast switching PWM inverters. Device ratings are in the 1000 V/100 A range, inverter power reaches up to some ten kilovoltamperes, respectively. Subjects of the comparison are the gate drive requirements, conduction and switching losses, switching speed and overload capability. An automated test equipment for the integral measurement of power losses in function of the switching frequency is described. As a result IGBT's need simple gate drive circuits, but operating frequency at rated current is lower, than that of a bipolar junction transistor with cellular structure. However the base drive circuit of a cellular transistor is more complex.

Three-phase 200 kVA UPS with IGBT consisting of high power factor converter and instantaneous waveform controlled HF PWM inverter

Abstract: A description is given of a three-phase 200 kVA UPS (uninterruptible power supply) In this UPS, both the input converter section and the output inverter section utilize an IGBT (insulated gate bipolar transistor) as a main semiconductor switching device Compared with the conventional type of UPS using bipolar junction transistors, this UPS provides an equivalent efficiency in spite of having an approximately 10 times higher switching frequency As a result, the new UPS is of a compact, lightweight, low-acoustic noise, and high performance design, resulting in reduced input harmonic current (less than 5% THD) and also a reduced output voltage distortion (less than 8% THD) under a nonlinear load >

MOS-gated bipolar power semiconductor device

Abstract: In the case of a MOS-controlled, bipolar power semiconductor component, starting from the structure of an IGBT, a recombination layer (10), which is doped in the same direction but more strongly to the base layer, is inserted into the base layer between anode (A) and cathode (K) divides the upper and lower base layers (7a and 7b). The resulting structure forms a series circuit of MOSFET (T) and PIN diode (D), which is snap-free and enables higher reverse voltages.

Semiconductor integrated circuit device with power consumption reducing arrangement

Abstract: In semiconductor circuits, and particularly in memories, it is often desirable to use bipolar transistors for speed together with MOS elements. However, although the bipolar transistors are useful for speed considerations, they undesirably significantly increase the power consumption of the overall circuit. Accordingly, to reduce power consumption, a bipolar/MOSFET arrangement is provided wherein MOSFETs are used as current sources to supply operation currents to the bipolar transistors only during the periods of their operation. Thus, a semiconductor integrated circuit device is achieved featuring a high operation speed yet consuming reduced amounts of electric power. Additionally, power consumption can be further reduced by providing a time serial operation for actuation of the MOSFETs in different peripheral circuits for a memory array.

Bi-CMOS logic circuit

Abstract: A Bi-CMOS logic circuit structured by bipolar transistors and insulated gate type transistors includes a first NPN bipolar transistor for charging an output node and a second NPN bipolar transistor for discharging the output node. The first bipolar transistor has a collector coupled to a first power supply and an emitter connected to the output node. The second bipolar transistor has a collector connected to the output node and an emitter coupled to a second power supply. The Bi-CMOS logic circuit also includes at least one P channel insulated gate type transistor provided between the first power supply and a base of the first bipolar transistor for receiving an input signal at its gate, and at least one N channel insulated gate type transistor provided between the output node and a base of the second bipolar transistor for receiving the input signal at its gate. The Bi-CMOS logic circuit further includes a third NPN bipolar transistor for drawing charges out of the base of the first bipolar transistor, and an impedance element for biasing the base of the second bipolar transistor relative to the second power supply. The third bipolar transistor has a collector connected to the base of the first bipolar transistor, a base connected to the base of the second bipolar transistor and an emitter connected to the second power supply. The impedance element includes a fourth N channel insulated gate type transistor having a gate connected to the output node, one conduction terminal connected to the respective bases of the second and third bipolar transistors, and other conduction terminal coupled to the second power supply.