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A. H. A. Hassan
Researcher at University of Warwick
Publications - 8
Citations - 119
A. H. A. Hassan is an academic researcher from University of Warwick. The author has contributed to research in topics: Electron mobility & Quantum well. The author has an hindex of 4, co-authored 8 publications receiving 96 citations. Previous affiliations of A. H. A. Hassan include University of Tripoli.
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Journal ArticleDOI
Ultra-high hole mobility exceeding one million in a strained germanium quantum well
A. Dobbie,Maksym Myronov,Robert H. Morris,A. H. A. Hassan,M. J. Prest,Vishal Shah,Evan H. C. Parker,Terry E. Whall,David R. Leadley +8 more
TL;DR: In this article, the authors reported a Hall mobility of one million in a germanium two-dimensional hole gas at a carrier sheet density of 3'×'1011'cm−2 at 12'K. This mobility is nearly an order of magnitude higher than any previously reported.
Journal ArticleDOI
Anisotropy in the hole mobility measured along the [110] and [1¯10] orientations in a strained Ge quantum well
A. H. A. Hassan,Robert H. Morris,O. A. Mironov,Richard Beanland,David Walker,Steven Huband,A. Dobbie,Maksym Myronov,David R. Leadley +8 more
TL;DR: In this paper, anisotropic transport properties of strained germanium (sGe) quantum wells grown on Si (001) substrates with p-type doping beneath the sGe channel were reported.
Journal ArticleDOI
Ultra high hole mobilities in a pure strained Ge quantum well
O. A. Mironov,A. H. A. Hassan,Richard J. H. Morris,A. Dobbie,M. Uhlarz,Daniel Chrastina,James P. Hague,S. Kiatgamolchai,Richard Beanland,S. Gabani,I. B. Berkutov,Manfred Helm,O. Drachenko,Maksym Myronov,David R. Leadley +14 more
TL;DR: In this article, the authors used maximum entropy-mobility spectrum analysis (ME-MSA) and Bryan's algorithm mobility spectrum (BAMS) analysis to determine hole gas drift mobility at low and room temperature.
Journal ArticleDOI
New RP‐CVD grown ultra‐high performance selectively B‐doped pure‐Ge 20 nm QWs on (100)Si as basis material for post‐Si CMOS technology
O. A. Mironov,A. H. A. Hassan,M. Uhlarz,S. Kiatgamolchai,A. Dobbie,Richard J. H. Morris,John E. Halpin,Stephen Rhead,Phil Allred,Maksym Myronov,S. Gabani,I. B. Berkutov,David R. Leadley +12 more
TL;DR: Magnetotransport studies at low and room temperature are presented for two-dimensional hole gases (2DHG) formed in fully strained germanium (sGe) quantum wells (QW) as discussed by the authors.
Journal ArticleDOI
An origin behind Rashba spin splitting within inverted doped sGe heterostructures
TL;DR: In this paper, the authors demonstrate why cubic Rashba spin splitting is observed within inverted doped strained germanium (sGe) hetrostructures and identify the source of spin splitting from a combination of ultra low energy secondary ion mass spectrometry analysis and subsequent band structure modelling using Nextnano3.