Maksym Myronov

TL;DR: In the effort to develop disruptive quantum technologies, germanium is emerging as a versatile material to realize devices capable of encoding, processing and transmitting quantum information as mentioned in this paper, such as a universal quantum gate set with spin qubits in quantum dots and superconductor-semiconductor hybrid quantum systems.

TL;DR: In this paper, the authors proposed a heterostructure design for tunnel field effect transistors with two low direct bandgap group IV compounds, GeSn and highly tensely strained Ge in combination with ternary SiGeSn alloy.

TL;DR: In this article, the physics of holes in low-dimensional germanium structures with key insights from a theoretical perspective are introduced and a review of the most significant experimental results demonstrating key building blocks for quantum technology, such as an electrically driven universal quantum gate set with spin qubits in quantum dots and superconducting pairing correlations.

TL;DR: A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (23 −± 18) −7 Ω-cm2 for anneal temperatures of 340 −°C.

TL;DR: In this paper, an innovative approach is proposed for epitaxial growth of high Ge content, relaxed Si1−xGex buffer layers on a Si(001) substrate.