A key tenet of bone tissue engineering is the development of scaffold materials that can stimulate stem cell differentiation in the absence of chemical treatment to become osteoblasts without compromising material properties. At present, conventional implant materials fail owing to encapsulation by soft tissue, rather than direct bone bonding. Here, we demonstrate the use of nanoscale disorder to stimulate human mesenchymal stem cells (MSCs) to produce bone mineral in vitro, in the absence of osteogenic supplements. This approach has similar efficiency to that of cells cultured with osteogenic media. In addition, the current studies show that topographically treated MSCs have a distinct differentiation profile compared with those treated with osteogenic media, which has implications for cell therapies.

The control of human mesenchymal cell differentiation using nanoscale symmetry and disorder

Hyperbranched polymers: from synthesis to applications

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New approaches to nanofabrication: molding, printing, and other techniques.

One-dimensional (1D) ZnO nanostructures have been studied intensively and extensively over the last decade not only for their remarkable chemical and physical properties, but also for their current and future diverse technological applications. This article gives a comprehensive overview of the progress that has been made within the context of 1D ZnO nanostructures synthesized via wet chemical methods. We will cover the synthetic methodologies and corresponding growth mechanisms, different structures, doping and alloying, position-controlled growth on substrates, and finally, their functional properties as catalysts, hydrophobic surfaces, sensors, and in nanoelectronic, optical, optoelectronic, and energy harvesting devices.

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One-dimensional ZnO nanostructures: Solution growth and functional properties

The primary metric for gauging progress in the various semiconductor integrated circuit technologies is the spacing, or pitch, between the most closely spaced wires within a dynamic random access memory (DRAM) circuit. Modern DRAM circuits have 140 nm pitch wires and a memory cell size of 0.0408 mum(2). Improving integrated circuit technology will require that these dimensions decrease over time. However, at present a large fraction of the patterning and materials requirements that we expect to need for the construction of new integrated circuit technologies in 2013 have 'no known solution'. Promising ingredients for advances in integrated circuit technology are nanowires, molecular electronics and defect-tolerant architectures, as demonstrated by reports of single devices and small circuits. Methods of extending these approaches to large-scale, high-density circuitry are largely undeveloped. Here we describe a 160,000-bit molecular electronic memory circuit, fabricated at a density of 10(11) bits cm(-2) (pitch 33 nm; memory cell size 0.0011 microm2), that is, roughly analogous to the dimensions of a DRAM circuit projected to be available by 2020. A monolayer of bistable, [2]rotaxane molecules served as the data storage elements. Although the circuit has large numbers of defects, those defects could be readily identified through electronic testing and isolated using software coding. The working bits were then configured to form a fully functional random access memory circuit for storing and retrieving information.

A 160-kilobit molecular electronic memory patterned at 10 11 bits per square centimetre

Electron beam lithography: resolution limits and applications

Measurements are reported on the magnetization reversal in submicron magnetic rings fabricated by high-resolution electron beam lithography and lift-off from cobalt thin films. For all dimensions investigated, with diameters of 300-800 nm and a thickness of 10-50 nm, the flux closure state is the stable magnetization configuration. However, with increasing diameter and decreasing film thickness a metastable near single domain state can be obtained during the reversal process in an in-plane applied field.

Flux Closure Structures in Cobalt Rings

Nucleation and annihilation of vortex states have been studied in two-dimensional arrays of densely packed cobalt dots. A clear signature of dipolar interactions both between single-domain state dots and vortex state dots has been observed from the dependence of vortex nucleation and annihilation fields on interdot separation. A direct consequence of these interactions is the formation of vortex chains as well as dipole chains aligned along the direction of the external field. In addition, short range correlation of chiralities within vortex chains has been observed using magnetic force microscopy imaging and has been attributed to cross-talking between adjacent elements.

Correlated magnetic vortex chains in mesoscopic cobalt dot arrays.

Nanoimprint lithography for a large area pattern replication

The magnetization reversal properties of high-resolution Co dot arrays fabricated by nanoimprint lithography have been studied as a function of both diameter and thickness. Both vortex and single-domain states were observed by measuring the hysteresis loops, which result in an experimental phase diagram in the diameter-thickness plane. In the vortex state, magnetization reversal proceeds by vortex nucleation, growth, and subsequent annihilation under relatively high field. The vortex growth has been shown to be reversible in a wide field range, in agreement with micromagnetic simulations. Finally, a distribution of annihilation fields in patterned dot arrays was studied experimentally.

A. Lebib

Papers

Electron beam lithography: resolution limits and applications

Flux Closure Structures in Cobalt Rings

Correlated magnetic vortex chains in mesoscopic cobalt dot arrays.

Nanoimprint lithography for a large area pattern replication

Size and thickness dependencies of magnetization reversal in Co dot arrays