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A. Rastogi

Researcher at Indian Institute of Technology Kanpur

Publications -  22
Citations -  686

A. Rastogi is an academic researcher from Indian Institute of Technology Kanpur. The author has contributed to research in topics: Superconductivity & Heterojunction. The author has an hindex of 10, co-authored 19 publications receiving 573 citations. Previous affiliations of A. Rastogi include University of Alabama & Indian Institutes of Technology.

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Two-dimensional superconducting phase in LaTiO3/SrTiO3 heterostructures induced by high-mobility carrier doping.

TL;DR: The calculation of the electron spatial distribution in the confinement potential shows that the high-mobility electrons responsible for superconductivity set at the edge of the gas whose extension can be tuned by the field effect.
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Multiple quantum criticality in a two-dimensional superconductor

TL;DR: This work examines the magnetic-field-driven quantum phase transition that occurs in electrostatically gated superconducting LaTiO3/Sr TiO3 interfaces and shows that it belongs to the (2+1)D XY model universality class.
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Limit of the electrostatic doping in two-dimensional electron gases of LaXO3(X = Al, Ti)/SrTiO3

TL;DR: It is shown that the Fermi energy lies intrinsically near the top of the quantum well and beyond a filling threshold, electrons added by electrostatic gating escape from the well, hence limiting the possibility to reach a highly-doped regime.
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Multiband superconductivity and nanoscale inhomogeneity at oxide interfaces

TL;DR: In this article, the authors model intrapuddle superconductivity by a multiband system within a weak coupling BCS scheme, and derive microscopic parameters, extracted by fitting the transport data with a percolative model, yield a consistent description of the dependence of the average intrapudd critical temperature and superfluid density on the carrier density.
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Photoconducting state and its perturbation by electrostatic fields in oxide-based two-dimensional electron gas

TL;DR: In this article, the two-dimensional electron gas formed at the interfaces of oxide heterostructures is investigated by means of a combined perturbation by near-ultraviolet radiation and an electrostatic field, applied both separately and simultaneously.