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A. S. Tarasov
Researcher at Siberian Federal University
Publications - 58
Citations - 299
A. S. Tarasov is an academic researcher from Siberian Federal University. The author has contributed to research in topics: Magnetoresistance & Semiconductor. The author has an hindex of 9, co-authored 49 publications receiving 229 citations. Previous affiliations of A. S. Tarasov include Siberian State Aerospace University & Russian Academy of Sciences.
Papers
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Magnetic-field- and bias-sensitive conductivity of a hybrid Fe/SiO2/p-Si structure in planar geometry
TL;DR: In this paper, the authors investigated magnetic-field and bias-sensitive features of the transport properties of a Fe/SiO2/p-Si hybrid structure in planar geometry at temperature variation.
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Triple VTe2/Graphene/VTe2 Heterostructures as Perspective Magnetic Tunnel Junctions
Lyudmila V. Begunovich,Artem V. Kuklin,Artem V. Kuklin,M.A. Visotin,Alexander A. Kuzubov,Felix N. Tomilin,A. S. Tarasov,Yuri G. Mikhalev,Pavel V. Avramov +8 more
TL;DR: In this paper, a spin-polarized triple heterostructures based on graphene sandwiched between two vanadium ditelluride monolayers were studied using ab initio DFT technique.
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Extremely large magnetoresistance induced by optical irradiation in the Fe/SiO2/p-Si hybrid structure with Schottky barrier
TL;DR: In this article, the authors reported the giant magnetoresistance (MR) effect that appeared under the influence of optical radiation in a common planar device built on Fe/SiO2/p-Si hybrid structure.
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Spin-dependent electrical hole extraction from low doped p-Si via the interface states in a Fe 3 Si/p-Si structure
A. S. Tarasov,A. V. Lukyanenko,M. V. Rautskii,I. A. Bondarev,D. A. Smolyakov,I. A. Tarasov,I. A. Yakovlev,S. N. Varnakov,Sergey Ovchinnikov,F. A. Baron,N. V. Volkov +10 more
TL;DR: In this article, a spin accumulation effect in Fe3Si/p-Si structure with low boron doped silicon substrate was found, and the spin lifetime was compared with results reported earlier for structures with highly doped semiconductors (SC) with or without a tunnel barrier introduced between the SC and ferromagnet (FM).
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Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure
N. V. Volkov,A. S. Tarasov,D. A. Smolyakov,A. O. Gustaitsev,M. V. Rautskii,A. V. Lukyanenko,Mikhail N. Volochaev,S. N. Varnakov,I. A. Yakovlev,Sergey Ovchinnikov +9 more
TL;DR: In this article, the Schottky barrier of a diode with the Mn/SiO2/p-Si structure in a magnetic field was investigated and it was observed that at low temperatures the dc and ac resistances of the device change by a factor of more than 106 with an increase in the magnetic field to 200 mT.