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A. V. Chunareva

Researcher at Russian Academy of Sciences

Publications -  6
Citations -  77

A. V. Chunareva is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Laser & Semiconductor laser theory. The author has an hindex of 4, co-authored 6 publications receiving 73 citations. Previous affiliations of A. V. Chunareva include Saint Petersburg Academic University.

Papers
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Proceedings ArticleDOI

High-power high-brightness semiconductor lasers based on novel waveguide concepts

TL;DR: In this paper, the performance of two types of edge emitting lasers with unconventional waveguides and lateral arrays thereof is evaluated, and the results on coherent coupling of several lasers are presented.
Journal ArticleDOI

Tilted Wave Lasers: A Way to High Brightness Sources of Light

TL;DR: In this paper, a tilted wave laser (TWL) was proposed to provide mirror-like reflection for the leaky mode of a leaky laser, which can exhibit multiple reflection and amplification cycles before exiting the device from the substrate facet.
Proceedings ArticleDOI

Modeling of photonic-crystal-based high-power high-brightness semiconductor lasers

TL;DR: In this paper, the concepts, features, modeling and practical realizations of high power high brightness semiconductor diode lasers having ultrathick and ultrabroad waveguides and emitting in the single vertical single lateral mode are analyzed.
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Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold current

TL;DR: In this paper, an edge-emitting tilted wave laser (TWL) with the active region based on GaInAs/GaAs quantum wells was investigated, where the wavelength stabilization is based on the coupling of the laser active waveguide cavity to a specially introduced thick epitaxial layer.
Journal ArticleDOI

A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes

TL;DR: In this paper, the concept of diffraction optical filter is used for prevention of high-order mode oscillation in a design of stripe laser diodes with an active region based on InAs/InGaAs quantum dots emitting in the 1.3-μm wavelength range grown on GaAs substrates.