Markus Weyers

TL;DR: In this paper, the optical properties of dilute GaAS1-xNx alloys have been reported and the authors assign the photoluminescence to band-edge transitions and not to isolated N-N pair emission.

TL;DR: The field of AlGaInN ultraviolet UV light-emitting diodes (LEDs) is reviewed, with a summary of the state-of-the-art in device performance and enumeration of applications.

TL;DR: With improved light output and reduced costs, GaN-based UV LEDs can provide a promising alternative for decentralised and mobile water disinfection systems.

TL;DR: In this paper, the growth of GaAs1−xNx alloys with metalorganic chemical vapor deposition at very low pressure (25 Pa) has been studied, and the GaAsN layers show a strong red shift of the photoluminescence with increasing N content.

TL;DR: In this article, the state of the art for the most important aspects of UV emitters, their challenges and their outlook for future developments are summarized. But, the development since the first realization of UV electroluminescence in the 1970s shows that an improvement in understanding and technology allows the performance ofUV emitters to be pushed far beyond the current state.