D.A. Livshits

TL;DR: In this paper, a two-section quantum-dot laser that produces output powers up to 45 mW at 1260 nm was demonstrated. The pulse duration could be varied from 2 ps to as short as 400 fs at the 21 GHz pulse repetition rate.

TL;DR: In this paper, GaAs-based broad area (100 µm) 1.3 µm quantum dot (QD) laser with high CW output power (5 W) and wall-plug efficiency (56%) was demonstrated.

TL;DR: In this article, multiple layers (up to 10) of InAs/InGaAs/GaAs quantum dots were used to enhance the optical gain of quantum dot laser emitting around 1.3 µm.

TL;DR: In this article, a diode laser based on self-organized quantum dots (QD's) on a GaAs substrate is demonstrated, where multiple stacking of InAs QD planes covered by thin InGaAs layers allows to prevent gain saturation and achieve long-wavelength lasing with low threshold current density (90-105 A/cm/sup 2/) and high output power (2.7 W) at 17/spl deg/C heatsink temperature.

TL;DR: A significant overlap and approximate equalization of the ground-state and the excited-state emission bands in the laser's spectrum is achieved by means of intentional inhomogeneous broadening of the quantum dot energy levels.