Aaron M. Jones

TL;DR: Electroluminescence from lateral p-n junctions in monolayer WSe2 induced electrostatically using a thin boron nitride support as a dielectric layer with multiple metal gates beneath is reported, which has the required ingredients for new types of optoelectronic device, such as spin- and valley-polarized light-emitting diodes, on-chip lasers and two-dimensional electro-optic modulators.

TL;DR: This work reports the unambiguous observation and electrostatic tunability of charging effects in positively charged, neutral and negatively charged excitons in field-effect transistors via photoluminescence and finds the charging energies for X(+) and X(-) to be nearly identical implying the same effective mass for electrons and holes.

TL;DR: The ability to address coherence, in addition to valley polarization, is a step forward towards achieving quantum manipulation of the valley index necessary for coherent valleytronics.

TL;DR: This work demonstrates optical pumping of interlayer electric polarization, which may provoke further exploration of inter layer exciton condensation, as well as new applications in two-dimensional lasers, light-emitting diodes and photovoltaic devices.

TL;DR: The experimental observation of highly anisotropic, bright excitons with large binding energy in monolayer black phosphorus opens avenues for the future explorations of many-electron physics in this unusual two-dimensional material, but also suggests its promising future in optoelectronic devices.