Showing papers by "Abdulmecit Türüt published in 2008"
TL;DR: In this article, the electrical characterization of PANI/p-Si/Al structure has been investigated by using current-voltage (I-V), capacitance voltages (C-V) and capacitance-frequency (Cf) characteristics.
91 citations
TL;DR: In this article, a quercetin/p-InP heterojunction solar cell has been fabricated via solution-processing method and characterized by currentvoltage and capacitance-voltage measurements at room temperature.
72 citations
TL;DR: In this paper, the electrical characteristics of crystal violet/p-Si OI Schottky structures formed by evaporation of organic compound solution to directly p-Si semiconductor substrate have been investigated.
59 citations
TL;DR: In this article, the Au/n-Si/Al Schottky diode was irradiated with 6MeV electrons and 3x10^1^2e^-/cm^2 fluency.
54 citations
TL;DR: In this paper, a sandwich device has been fabricated from DNA molecular film by solution processing located between Al and p-type silicon inorganic semiconductor, and the electrical characteristics of the device such as current voltage, capacitance voltage, and capacitance frequency were performed at room temperature and in dark.
37 citations
TL;DR: In this paper, a modified Norde's function combined with the conventional forward I?V method has been used to extract the parameters including barrier height and series resistance, and it has been seen that there is a good agreement between the barrier height values from both methods.
Abstract: We have fabricated an Al/Safranin T (ST)/n-Si/AuSb device and have investigated its current?voltage (I?V), capacitance?voltage (C?V) and capacitance?frequency (C?f) characteristics at room temperature. The barrier height and ideality factor values of 0.78 eV and 3.52 have been obtained from the forward bias current?voltage plot. The value of the barrier height was compared with the barrier height value of 0.50 eV of a conventional Al/n-Si diode. This was attributed to the ST organic film modifying the effective barrier height by affecting the space charge region of the inorganic Si semiconductor substrate. A modified Norde's function combined with the conventional forward I?V method has been used to extract the parameters including barrier height and series resistance. The barrier height and series resistance obtained from Norde's function have been compared with those from Cheung functions, and it has been seen that there is a good agreement between the barrier height values from both methods. It has also been seen that the values of capacitance are almost independent of frequency up to a certain value of frequency, whereas at high frequencies the capacitance has decreased. The higher values of capacitance at low frequencies have been attributed to the excess capacitance resulting from the interface states in equilibrium with the n-Si that can follow the alternating current (ac) signal.
36 citations
TL;DR: In this article, the electrical parameters of an Al/methyl violet/p-Si Schottky device were studied under γ irradiation at room temperature, and it was shown that γ radiation gives rise to an increase in the barrier height, the ideality factor and the interfacial state density.
Abstract: We have studied electrical parameters of an Al/methyl violet/p-Si Schottky device by using current–voltage and capacitance–voltage–frequency measurements under γ irradiation at room temperature. Experimental results have shown that γ radiation gives rise to an increase in the barrier height, the ideality factor and the interfacial state density, while the series resistance decreases by applied radiation.
34 citations
TL;DR: In this paper, the temperature dependence of current-voltage (I-V) characteristics of as-fabricated and annealed Ni/n-type 6H-SiC Schottky diode has been investigated in the temperature range of 100-500K.
32 citations
TL;DR: In this article, high quality Schottky sandwich devices were fabricated on an InP single crystal by solution processing a semiconducting polymer, DNA, as the metal electrodes, and the authors observed that DNA-based on this structure showed an excellent rectifying behavior with a typical ideality factor of 126, and that DNA film increased the effective barrier height by influencing the space charge region of InP Modeling.
Abstract: High quality Schottky sandwich devices were fabricated on an InP single crystal by solution processing a semiconducting polymer, DNA, as the metal electrodes We observed that DNA-based on this structure showed an excellent rectifying behavior with a typical ideality factor of 126, and that DNA film increased the effective barrier height by influencing the space charge region of InP Modeling, which includes a transport mechanism, reveals thermionic emission to be the dominant transport mechanisms for the diode (ideality factor n<13) We proposed that DNA could be a semiconductorlike material with a wide optical band energy gap of 395eV from its optical absorbance characteristics We also evaluated photovoltaic characteristic of the device under an illumination condition
30 citations
TL;DR: In this paper, a methyl red/p-InP organic-inorganic (OI) Schottky device was constructed by evaporation of an organic compound solution directly to a p-inP semiconductor wafer.
Abstract: We prepared a methyl red/p-InP organic–inorganic (OI) Schottky device formed by evaporation of an organic compound solution directly to a p-InP semiconductor wafer. The value of the optical band gap energy of the methyl red organic film on a glass substrate was obtained as 2.0 eV. It was seen that the Al/methyl red/p-InP contacts showed a good rectifying behavior. An ideality factor of 2.02 and a barrier height (Φb) of 1.11 eV for the Al/methyl red/p-InP contact were determined from the forward bias I–V characteristics. It was seen that the value of 1.11 eV obtained for Φb for the Al/methyl red/p-InP contact was significantly larger than the value of 0.83 eV for conventional Al/p-InP Schottky diodes. Modification of the interfacial potential barrier for the Al/p-InP diode was achieved using a thin interlayer of the methyl red organic semiconductor. This ascribed to the fact that the methyl red interlayer increases the effective Φb by influencing the space charge region of InP.
30 citations
TL;DR: In this article, the thermal stability of Ni/n-GaAs/In Schottky barrier diodes has been investigated by means of currentvoltage (I-V) techniques after annealed for 1min in N"2 atmosphere from 200 to 700^oC.
TL;DR: In this article, the effective barrier heights and ideality factors of identically fabricated Ni/n-type 6 H-SiC Schottky diodes (23 dots) have been calculated from their experimental forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C−V) characteristics.
Abstract: The effective barrier heights and ideality factors of identically fabricated Ni/n-type 6 H-SiC Schottky diodes (23 dots) have been calculated from their experimental forward bias current–voltage (I–V) and reverse bias capacitance–voltage (C–V) characteristics. A statistical study related to the experimental barrier heights (BHs) and ideality factors of the diodes has been made. The effective Schottky barrier heights (SBHs) and ideality factors obtained from the I–V and C–V characteristics have differed from diode to diode. The BHs obtained from the I–V characteristics varied from 0.85 to 1.03 eV, the ideality factors varied from 1.13 to 1.40 and the BHs from C-2–V characteristics varied from 1.10 to 1.70 eV. The experimental BH and ideality factor distributions obtained from the I–V characteristics are fitted by a Gaussian function, and their mean values are found to be 0.92±0.04 eV and 1.29±0.08 eV, respectively. The lateral homogeneous SBH value of 1.16 eV for the Ni/n-type 6H-SiC diodes has been calculated from a linear extrapolation of the effective barrier heights to nif=1.03.
TL;DR: In this paper, annealed Au/p-in-InP Schottky barrier diodes (SBDs) were prepared up to 400°C thermally, and the barrier height for the as-deposited SBDs from the current-voltage characteristics have varied from 0.58 to 0.72 eV, and ideality factor n from 1.14 to 1.39.
TL;DR: In this article, an Al/new fuchsin/p-Si organic Schottky diode structure was fabricated by direct evaporation of an organic compound solution on a p-Si semiconductor wafer.
Abstract: In this paper, we fabricated an Al/new fuchsin/p-Si organic?inorganic (OI) Schottky diode structure by direct evaporation of an organic compound solution on a p-Si semiconductor wafer. A direct optical band gap energy value of the new fuchsin organic film on a glass substrate was obtained as 1.95?eV. Current?voltage (I?V) and capacitance?voltage (C?V) measurements of the OI device were carried out at room temperature. From the I?V characteristics, it was seen that the Al/new fuchsin/p-Si contacts showed good rectifying behavior. An ideality factor value of 1.47 and a barrier height (BH) value of 0.75?eV for the Al/new fuchsin/p-Si contact were determined from the forward bias I?V characteristics. A barrier height value of 0.78?eV was obtained from the capacitance?voltage (C?V) characteristics. It has been seen that the BH value of 0.75?eV obtained for the Al/new fuchsin/p-Si contact is significantly larger than that of conventional Al/p-Si Schottky metal?semiconductor (MS) diodes. Thus, modification of the interfacial potential barrier for Al/p-Si diodes has been achieved using a thin interlayer of the new fuchsin organic semiconductor; this has been ascribed to the fact that the new fuchsin interlayer increases the effective barrier height because of the interface dipole induced by passivation of the organic layer.
TL;DR: In this article, the Schottky barrier height of Ni/n-Si/Au-Sb (21 dots) barrier diodes has been determined from the experimental linear relationship between the barrier heights and ideality factors.
Abstract: Ni/n-Si/Au–Sb (21 dots) Schottky barrier diodes (SBDs) have been identically prepared by the electrodeposition method. The electrodeposition of Ni films on the n-type Si substrate has been carried out at a constant current density from an aqueous electrolyte of sulfate of Ni. The barrier height for the electrodeposited Ni/n-Si/ SBDs from the current–voltage (I–V) characteristics has varied from 0.58 to 0.70 eV, and ideality factor n from 1.10 to 1.66. We have determined a lateral homogeneous barrier height value of approximately 0.69 eV for the electrodeposited Ni/n-Si/SBDs from the experimental linear relationship between the barrier heights and ideality factors. The experimental Schottky barrier height (SBH) distribution obtained from the I–V characteristics has been fitted by a Gaussian function and a mean SBH value of 0.63 eV with a standard deviation of 30 meV has been obtained for the Ni/n-Si SBDs.
TL;DR: In this paper, a modified Norde's function combined with conventional forward I-V method was used to extract the parameters including barrier height (BH) and series resistance, and it was seen that there was a good agreement between the BH values and series resistances from both methods.
TL;DR: In this article, the authors reported that DNA-based this structure shows an excellent rectifying behavior, and that the DNA film increases the effective barrier height by influencing the space charge region of InP.
TL;DR: In this article, the reverse bias capacitance-voltage (C-V) characteristics of the polyaniline/p-Si structure have been determined at different temperatures and the 1/C2-V plots of the structure are nonlinear and the values of the diffusion potentials are exceeding the band gap value.
Abstract: The polyaniline/p-Si structure has been made by the electrochemical polymerization of the organic polyaniline onto the p-Si substrate. The reverse bias capacitance–voltage (C–V) characteristics of the structure have been determined at different temperatures. The 1/C2–V plots of the structure are non-linear and the values of the diffusion potentials are exceeding the band gap value and these characteristics have been attributed to the presence of the excess capacitance due to the space charge and interface states in the depletion layer. Non-linear 1/C2–V plots showing curvature concave downwards have been transformed into linear 1 ( C - C 0 ) 2 vs. V plots by determining the excess capacitance, C0. Then, some junction parameters, such as the barrier height, have been calculated.
TL;DR: In this paper, an experimental barrier height (BH) Φap value of about 0.85 eV was obtained for the Ti/p-InP Schottky diode at 300 K.
Abstract: The current–voltage (I–V) characteristics of Ti/p-InP Schottky diodes have been measured in a wide temperature range with a temperature step of 20 K. An experimental barrier height (BH) Φap value of about 0.85 eV was obtained for the Ti/p-InP Schottky diode at 300 K. A decrease in the experimental BH Φap and an increase in the ideality factor n with a decrease in temperature have been explained on the basis of a thermionic emission mechanism with the Gaussian distribution of the barrier heights due to the BH inhomogeneities at the metal–semiconductor interface. and A* as 1.01 eV, and 138 A cm−2 K2, respectively, have been calculated from a modified ln(I0/T2) − q2σ2s/2k2T2 versus 1/T plot. This BH value is in close agreement with the values of 0.99 eV obtained from the Φap versus 1/T and ln(I0/T2) versus 1/nT plots.
TL;DR: In this article, aniline green/p-Si organic-inorganic devices (total 27 diodes) formed by direct evaporation of an organic compound solution on to a p-Si semiconductor wafer, and then studied the currentvoltage and capacitance-voltage (C-V) characteristics of these devices.
Abstract: In this study, we identically prepared the aniline green/p-Si organic–inorganic devices (total 27 diodes) formed by direct evaporation of an organic compound solution on to a p-Si semiconductor wafer, and then studied the current–voltage (I–V) and capacitance–voltage (C–V) characteristics of these devices. It was seen that the aniline green organic thin film on the p-Si substrate showed a good rectifying behavior. The barrier heights (BHs) and ideality factors of all devices were extracted from the electrical characteristics. Mean BH and ideality factor were calculated as 0.582 eV and 2.999, respectively from the I–V characteristics. Additionally, the mean barrier height and mean acceptor doping concentration from C–V measurements were calculated as (0.61 ± 0.10) eV and (5.54 ± 0.68) × 1014 cm−3, respectively. The discrepancy in the BH values obtained from I–V and C–V characteristics has been attributed to different nature of the measurements. This can also be due to the existence of the interfacial native oxide and the organic aniline green thin layer between the semiconductor and contacting top metal.
11 Aug 2008-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this article, the effects of high-energy electron irradiation on the electrical characteristics of a Rhodamine-101(Rh101)/p-Si Schottky structure were investigated.
Abstract: In this study, the effects of high-energy electron irradiation on the electrical characteristics of a Rhodamine-101(Rh101)/p-Si Schottky structure were investigated. Some contact parameters such as barrier height, ideality factor and series resistance were calculated from the current–voltage (I–V) characteristics. It was seen that these three parameters were increased by the electron irradiation. After the electron irradiation, it was also seen that the carrier concentration, the reverse bias current and the capacitance of the device decreased.
TL;DR: In this paper, a modified Norde's function combined with conventional forward I-V method was used to extract the parameters including barrier height and the series resistance, and it was seen that there was a good agreement between the barrier height values from both method.
TL;DR: In this article, the influence of hydrogen pre-annealing and barrier metal thickness on the Au/ n -GaAs Schottky barrier diodes was investigated and the results showed that the ideality factor and barrier height for un-annealed diods range from 1.14 and 0.855 eV (for 5-nm) to 1.08 and 1.794 eV for 100-nm, respectively.