A
Ahmad Al-Jabr
Researcher at King Abdullah University of Science and Technology
Publications - 15
Citations - 129
Ahmad Al-Jabr is an academic researcher from King Abdullah University of Science and Technology. The author has contributed to research in topics: Laser & Semiconductor laser theory. The author has an hindex of 6, co-authored 15 publications receiving 113 citations.
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Journal ArticleDOI
Analysis of CMOS Compatible Cu-Based TM-Pass Optical Polarizer
TL;DR: In this article, a transverse-magnetic-pass (TM-pass) optical polarizer based on the complementary metal-oxide-semiconductor technology platform is proposed and analyzed using the 2D method-of-lines numerical model.
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A Simple FDTD Algorithm for Simulating EM-Wave Propagation in General Dispersive Anisotropic Material
TL;DR: In this article, an FDTD algorithm for simulating propagation of EM waves in anisotropic material is presented, which is based on the auxiliary differential equation and the general polarization formulation.
Journal ArticleDOI
First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm
Mohammed Abdul Majid,Ahmad Al-Jabr,Hassan M. Oubei,Mohd Sharizal Alias,Dalaver H. Anjum,Tien Khee Ng,Boon S. Ooi +6 more
TL;DR: In this article, the fabrication of an orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported, with a wavelength as short as 608 nm and a maximum output power of ∼46 mW.
Journal ArticleDOI
Large bandgap blueshifts in the InGaP/InAlGaP laser structure using novel strain-induced quantum well intermixing
Ahmad Al-Jabr,Mohammed Abdul Majid,Mohd Sharizal Alias,Dalaver H. Anjum,Tien Khee Ng,Boon S. Ooi +5 more
TL;DR: In this paper, a novel quantum well intermixing (QWI) technique that induces a large degree of bandgap blueshift in the InGaP/InAlGaP laser structure was reported.
Proceedings ArticleDOI
First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique
Mohammed Abdul Majid,Ahmad Al-Jabr,Rami T. ElAfandy,Hassan M. Oubei,Mohd Sharizal Alias,Bayan A. Alnahhas,Dalaver H. Anjum,Tien Khee Ng,Mohamed Ghazy Shehata,Boon S. Ooi +9 more
TL;DR: In this article, a strain-induced quantum well intermixing (QWI) technique is employed on InGaP/InAlGaP material system to promote interdiffusion via application of a thick-dielectric encapsulant layer, in conjunction with cycleannealing at elevated temperature.