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Aigu L. Lin
Researcher at National University of Singapore
Publications - 4
Citations - 52
Aigu L. Lin is an academic researcher from National University of Singapore. The author has contributed to research in topics: Oxide & Graphene. The author has an hindex of 4, co-authored 4 publications receiving 48 citations.
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Journal ArticleDOI
Room Temperature Magnetic Graphene Oxide‐ Iron Oxide Nanocomposite Based Magnetoresistive Random Access Memory Devices via Spin‐Dependent Trapping of Electrons
Aigu L. Lin,Haiyang Peng,Zhiqi Liu,Tom Wu,Chenliang Su,Kian Ping Loh,Ariando,Wei Chen,Andrew T. S. Wee +8 more
Journal ArticleDOI
Tunable room-temperature ferromagnet using an iron-oxide and graphene oxide nanocomposite
Aigu L. Lin,J. N. B. Rodrigues,Chenliang Su,Mirco Milletari,Kian Ping Loh,Tom Wu,Wei Chen,A. H. Castro Neto,Shaffique Adam,Shaffique Adam,Andrew T. S. Wee +10 more
TL;DR: In this paper, an iron-oxide and graphene oxide nanocomposite based device that acts as a tunable ferromagnet at room temperature has been demonstrated, where the magnetization can also be tuned from zero to 0.011 A.m$2$/kg through an initialization process with two readily accessible knobs (magnetic field and electric current), after which the system retains its magnetic properties semi-permanently until the next initialization process.
Journal ArticleDOI
Tunable room-temperature ferromagnet using an iron-oxide and graphene oxide nanocomposite.
Aigu L. Lin,J. N. B. Rodrigues,Chenliang Su,Mirco Milletari,Kian Ping Loh,Tom Wu,Wei Chen,A. H. Castro Neto,Shaffique Adam,Shaffique Adam,Andrew T. S. Wee +10 more
TL;DR: An iron-oxide and graphene oxide nanocomposite based device that acts as a tunable ferromagnet at room temperature that can be tuned from zero to 0.011 A m2/kg through an initialization process with two readily accessible knobs.
Journal ArticleDOI
Room temperature positive magnetoresistance via charge trapping in polyaniline-iron oxide nanoparticle composites
TL;DR: A polyaniline-iron oxide nanoparticle (PANI-NP) organic hybrid composite device with room temperature positive magnetoresistance of 85.7% was demonstrated in this article.