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Ariando

Researcher at National University of Singapore

Publications -  144
Citations -  5398

Ariando is an academic researcher from National University of Singapore. The author has contributed to research in topics: Magnetoresistance & Superconductivity. The author has an hindex of 37, co-authored 143 publications receiving 4700 citations. Previous affiliations of Ariando include University of Twente & Massachusetts Institute of Technology.

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Electronic phase separation at the LaAlO3/SrTiO3 interface

TL;DR: An EPS state is reported at the LaAlO(3)/SrTiO (3) interface, where the interface charges are separated into regions of a quasi-two-dimensional electron gas, a ferromagnetic phase, which persists above room temperature, and a diamagnetic/paramagnetic phase below 60 K.
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Ordering and manipulation of the magnetic moments in large-scale superconducting pi-loop arrays.

TL;DR: The realization of large-scale coupled π-loop arrays based on YBa2Cu3O7-Au-Nb Josephson contacts are reported, of interest as model systems for studying magnetic phenomena—including frustration effects—in Ising antiferromagnets and for designing quantum computers based on flux-qubits with viable quantum error correction capabilities.
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Origin of the two-dimensional electron gas at LaAlO3/SrTiO3 interfaces: The role of oxygen vacancies and electronic reconstruction

TL;DR: In this paper, a comprehensive comparison of (100)-oriented SrTiO3 substrates with crystalline and amorphous overlayers of LaAlO3 of different thicknesses prepared under different oxygen pressures was conducted.
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Origin of the Two-Dimensional Electron Gas at LaAlO 3 /SrTiO 3 Interfaces: The Role of Oxygen Vacancies and Electronic Reconstruction

TL;DR: In this article, the electrical properties of amorphous and crystalline LaAlO/SrTiO heterostructures were compared and it was shown that the answer depends on the structure of the overlayer.
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Imaging and control of ferromagnetism in LaMnO3/SrTiO3 heterostructures

TL;DR: An atomically sharp transition to a ferromagnetic phase when polar antiferromagnetic LaMnO3 (001) films are grown on SrTiO3 substrates is reported, demonstrating that functionalities can be engineered in oxide films that are only a few atomic layers thick.