Alexantrou Serb

TL;DR: A programming methodology is proposed that allows for operating metal-oxide memristive devices as multibit memory elements with highly packed yet clearly discernible memory states that were found to correlate with the transport properties of the introduced barrier layers.

TL;DR: It is proved that information on spike amplitude and frequency can be transduced and stored in single devices as non-volatile resistive state transitions and shown that a memristive device array allows for efficient data compression of signals recorded by a multi-electrode array.

TL;DR: It is demonstrated that single solid-state TiO2 memristors can exhibit non-associative plasticity phenomena observed in biological synapses, supported by their metastable memory state transition properties.

TL;DR: This work reports on memristive links between brain and silicon spiking neurons that emulate transmission and plasticity properties of real synapses and demonstrates a three-neuron brain-silicon network wherememristive synapses undergo long-term potentiation or depression driven by neuronal firing rates.

TL;DR: In this paper, the authors analyzed the resistance switching dynamics of TiN/HfO2/Pt devices and found that the stimulation with trains of identical pulses at voltages near the threshold results in a gradual SET transition, whereby the resistive state visits a continuum of intermediate levels as it approaches some low resistance state limit.