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Alrun A. Günther

Researcher at Dresden University of Technology

Publications -  9
Citations -  562

Alrun A. Günther is an academic researcher from Dresden University of Technology. The author has contributed to research in topics: Field-effect transistor & Transistor. The author has an hindex of 8, co-authored 9 publications receiving 473 citations.

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Band structure engineering in organic semiconductors

TL;DR: It is shown that continuous band energy tuning is indeed possible by varying the blend ratios of certain organic phthalocyanines and their fluorinated or chlorinated derivatives, and photoelectron spectroscopy confirms that the ionization energies of crystalline organic semiconductors can be continuously tuned over a wide range by blending them with their halogenated derivatives.
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Contact Doping for Vertical Organic Field‐Effect Transistors

TL;DR: In this article, the performance of p-type VOFETs with pentacene as an active material can be significantly enhanced by the addition of the common p-dopant C60F36 as a thin injection layer underneath the source electrode, resulting in an increase of On-state current and On/Off ratio by one order of magnitude.
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High‐Performance Vertical Organic Transistors

TL;DR: In this paper, high performance vertical organic transistors comprising pentacene for p-type operation and C60 for n-type operations are presented, disclosing a remarkable transistor operation with a behavior limited by injection of charge carriers.
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Vertical organic transistors.

TL;DR: Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-μm structuring technologies, and in this review, these different approaches are compared and recent progress is highlighted.
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Materials Meets Concepts in Molecule-Based Electronics

TL;DR: In this paper, molecular materials are highlighted as an important topic in the diverse field of condensed matter physics, with focus on their particular electronic and transport properties, including the accurate description of electron-phonon coupling.