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Alwyn J. Seeds

Researcher at University College London

Publications -  466
Citations -  12674

Alwyn J. Seeds is an academic researcher from University College London. The author has contributed to research in topics: Laser & Photonics. The author has an hindex of 50, co-authored 454 publications receiving 11208 citations. Previous affiliations of Alwyn J. Seeds include Alcan & Queen Mary University of London.

Papers
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Proceedings ArticleDOI

Wideband fibre-agnostic DAS using pluggable analogue optical modules

TL;DR: In this article, a wideband (370?2500MHz) distributed antenna system (DAS) which uses pluggable analogue optical transceivers based on the industry standard small form-factor (SFP) format is presented.
Journal ArticleDOI

Photodiodes for Terahertz Applications

TL;DR: In this article, the authors present a modeling tool for the numerical evaluation of antenna coupled uni-travelling carrier photodiodes and experimental evaluation of the fabricated designs.
Journal ArticleDOI

Theoretical Study on the Effects of Dislocations in Monolithic III-V Lasers on Silicon

TL;DR: In this paper, the authors present an approach to modeling III-V lasers on silicon based on a travelling-wave rate equation model with sub-micrometer resolution by allowing spatially resolved inclusion of individual dislocations along the laser cavity, which offers new insights into the physical mechanisms behind the characteristics of 980nm In(Ga)As/GaAs quantum well (QW) and 1.3μm quantum dot (QD) lasers grown on silicon.
Journal ArticleDOI

Optical comb for generation of a continuously tunable coherent THz signal from 122.5 GHz to >2.7 THz.

TL;DR: A continuously tunable optical frequency comb generator (OFCG), with comb lines spanning over 3.8 THz which, to the best of the authors' knowledge, is the widest span yet reported for a single-phase modulator OFCG system.
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InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy

TL;DR: The first InGaAsP-based uni-travelling carrier photodiode structure grown by Solid Source Molecular Beam Epitaxy is reported, which gives the benefit of the superior control provided by MBE growth techniques without the costs and the risks of handling toxic gases.