Alwyn J. Seeds

TL;DR: In this article, the authors demonstrate electrically pumped continuous-wave InAs/GaAs quantum dot lasers monolithically grown on silicon substrates with a low threshold current density of 62.5 Acm−2, a room temperature output exceeding 105 mW, operation up to 120 °C, and long extrapolated lifetime exceeding 100,000 h.

TL;DR: Tunnelling non-linearity in a specially fabricated Schottky-N** plus diode is used to down-convert an electrical signal using an intensity modulated optical local oscillator signal.

TL;DR: Techniques for providing broadband wireless access using millimetre-wave over fibre systems using optical phase lock loop techniques and in signal detection using optically controlled heterojunction phototransistors are reviewed.

TL;DR: In this paper, a method of manufacturing a semiconductor device suitable for optoelectronic switching in response to light of wavelengths in the range 1200 nm to 1600 nm, comprising forming an undoped InGaAs layer on an insulative semiconductor substrate and bonded on opposed sides to a pair of electrical contact layers adapted to constitute the electrodes of a switch, was proposed.

TL;DR: In this paper, an uncooled DBR laser was used for WDM transmission at 2 GHz from 10 oC to 70 oC using a predicting algorithm, and the wavelength of the laser was stabilised within 2 GHz.