There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

On September 14, 2015 at 09:50:45 UTC the two detectors of the Laser Interferometer Gravitational-Wave Observatory simultaneously observed a transient gravitational-wave signal. The signal sweeps upwards in frequency from 35 to 250 Hz with a peak gravitational-wave strain of 1.0×10(-21). It matches the waveform predicted by general relativity for the inspiral and merger of a pair of black holes and the ringdown of the resulting single black hole. The signal was observed with a matched-filter signal-to-noise ratio of 24 and a false alarm rate estimated to be less than 1 event per 203,000 years, equivalent to a significance greater than 5.1σ. The source lies at a luminosity distance of 410(-180)(+160)  Mpc corresponding to a redshift z=0.09(-0.04)(+0.03). In the source frame, the initial black hole masses are 36(-4)(+5)M⊙ and 29(-4)(+4)M⊙, and the final black hole mass is 62(-4)(+4)M⊙, with 3.0(-0.5)(+0.5)M⊙c(2) radiated in gravitational waves. All uncertainties define 90% credible intervals. These observations demonstrate the existence of binary stellar-mass black hole systems. This is the first direct detection of gravitational waves and the first observation of a binary black hole merger.

/pdf/the-observation-of-gravitational-waves-from-a-binary-black-58srpupgg9.pdf

The Observation of Gravitational Waves from a Binary Black Hole Merger

Microwave photonics, which brings together the worlds of radiofrequency engineering and optoelectronics, has attracted great interest from both the research community and the commercial sector over the past 30 years and is set to have a bright future. The technology makes it possible to have functions in microwave systems that are complex or even not directly possible in the radiofrequency domain and also creates new opportunities for telecommunication networks. Here we introduce the technology to the photonics community and summarize recent research and important applications.

Microwave photonics combines two worlds

An overview of analog microwave photonics will be presented. The performance requirements for externally-modulated analog microwave photonic links will be reviewed with specific emphasis placed on modulator efficiency, laser noise, detected photocurrent, and link linearity.

http://ieeexplore.ieee.org/iel5/6387506/6403300/06403360.pdf

Microwave photonics

The requirement for narrow linewidth lasers or short-loop propagation delay makes the realization of optical phase-lock loops using semiconductor lasers difficult. Although optical injection locking can provide low phase error variance for wide linewidth lasers, the locking range is restricted by stability considerations. Theoretical and experimental results for a system which combines both techniques so as to overcome these limitations, the optical injection phase-lock loop (OIPLL), are reported. Phase error variance values as low as 0.006 rad/sup 2/ (500 MHz bandwidth) and locking ranges exceeding 26 GHz were achieved in homodyne OIPLL systems using DFB lasers of summed linewidth 36 MHz, loop propagation delay of 15 ns and injection ratio less than -30 dB. Phase error variance values as low as 0.003 rad/sup 2/ in a bandwidth of 100 MHz, a mean time to cycle slip of 3/spl times/10/sup 10/ s and SSB noise density of -94 dBc/Hz at 10 kHz offset were obtained for the same lasers in an heterodyne OIPLL configuration with loop propagation delay of 20 ns and injection ratio of -30 dB.

High-performance phase locking of wide linewidth semiconductor lasers by combined use of optical injection locking and optical phase-lock loop

The first experimental demonstration is reported of a heterodyne optical phase-lock loop (OPLL) using semiconductor lasers without external cavities or other linewidth narrowing methods. For a total loop propagation delay of 3 ns and a loop filter bandwidth of 700 MHz, a phase error variance of 1.02 rad2 was achieved in 500 MHz measurement bandwidth.

Fast heterodyne optical phase-lock loop using double quantum well laser diodes

Nanometre-scale semiconductor devices have been envisioned as next-generation technologies with high integration and functionality. Quantum dots, or the so-called ‘artificial atoms’, exhibit unique properties due to their quantum confinement in all 3D. These unique properties have brought to light the great potential of quantum dots in optoelectronic applications. Numerous efforts worldwide have been devoted to these promising nanomaterials for next-generation optoelectronic devices, such as lasers, photodetectors, amplifiers, and solar cells, with the emphasis on improving performance and functionality. Through the development in optoelectronic devices based on quantum dots over the last two decades, quantum dot devices with exceptional performance surpassing previous devices are evidenced. This review describes recent developments in quantum dot optoelectronic devices over the last few years. The paper will highlight the major progress made in 1.3 μm quantum dot lasers, quantum dot infrared photodetectors, and quantum dot solar cells.

https://iopscience.iop.org/article/10.1088/0022-3727/48/36/363001/pdf

Quantum dot optoelectronic devices: lasers, photodetectors and solar cells

In this paper, we present the first fully packaged semiconductor laser optical phase-locked loop (OPLL) microwave photonic transmitter. The transmitter is based on semiconductor lasers that are directly phase locked without the use of any other phase noise-reduction mechanisms. In this transmitter, the lasers have a free-running summed linewidth of 6 MHz and the OPLL has a feedback bandwidth of 70 MHz. A state-of-the-art performance is obtained, with a total phase-error variance of 0.05 rad/sup 2/ (1-GHz bandwidth) and a carrier phase-error variance of 7/spl times/10/sup -4/ rad/sup 2/ in a 15-MHz bandwidth. Carriers are generated in the range of 7-14 GHz. The OPLL transmitter has been fully packaged for practical use in field trials. This is the first time this type of transmitter has been fabricated in a packaged state which is a significant advance on the route to practical application.

Packaged semiconductor laser optical phase-locked loop (OPLL) for photonic generation, processing and transmission of microwave signals

We report the first room-temperature continuous-wave operation of III-V quantum-dot laser diodes monolithically grown on a Si substrate. Long-wavelength InAs/GaAs quantum-dot structures were fabricated on Ge-on-Si substrates. Room-temperature lasing at a wavelength of 1.28 μm has been achieved with threshold current densities of 163 A/cm2 and 64.3 A/cm2 under continuous-wave and pulsed conditions for ridge-waveguide lasers with as cleaved facets, respectively. The value of 64.3 A/cm2 represents the lowest room-temperature threshold current density for any kind of laser on Si to date.

Alwyn J. Seeds

Papers

High-performance phase locking of wide linewidth semiconductor lasers by combined use of optical injection locking and optical phase-lock loop

Fast heterodyne optical phase-lock loop using double quantum well laser diodes

Quantum dot optoelectronic devices: lasers, photodetectors and solar cells

Packaged semiconductor laser optical phase-locked loop (OPLL) for photonic generation, processing and transmission of microwave signals

Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities.