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Alwyn J. Seeds

Researcher at University College London

Publications -  466
Citations -  12674

Alwyn J. Seeds is an academic researcher from University College London. The author has contributed to research in topics: Laser & Photonics. The author has an hindex of 50, co-authored 454 publications receiving 11208 citations. Previous affiliations of Alwyn J. Seeds include Alcan & Queen Mary University of London.

Papers
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1.3 μm InAs/GaAs quantum‐dot laser monolithically grown on Si substrates operating over 100°C

TL;DR: In this paper, a 1.3 μm InAs/GaAs quantum-dot laser directly grown on Si substrates has been achieved by using InAlAs/GAAs strained-layer superlattice serving as dislocation filter layers (DFLs).
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InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate

TL;DR: In this paper, the first superluminescent light-emitting diode (SLD) was constructed on a Si substrate and the two-section InAs/GaAs quantum-dot (QD) SLD produced a close-toGaussian emission spectrum of 114 nm centered at 1255 nm wavelength, with a maximum output power of 2.6 mW at room temperature.
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Optical injection locking and phase-lock loop combined systems.

TL;DR: This work has taken into account the modification of the slave laser phase response induced by the injection locking to calculated the phase-error signal spectrum and thephase-error variance for an optical injection locking and phase-lock system.
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High-Dynamic-Range Wireless-Over-Fiber Link Using Feedforward Linearization

TL;DR: In this article, the authors demonstrate the implementation of feedforward linearization at 5 GHz, which is the highest operating frequency yet reported, with 500-MHz linearization bandwidth having at least 24dB distortion suppression.
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Integration of III-V lasers on Si for Si photonics

TL;DR: In this article, the authors review the latest developments on telecommunication wavelength III-V lasers integrated on Si substrates, in terms of integration methods and laser performance, and propose a monolithic and heterogeneous integration of IIIV semiconductor components on Si platforms.