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Andreas Löffler
Researcher at University of Würzburg
Publications - 104
Citations - 5881
Andreas Löffler is an academic researcher from University of Würzburg. The author has contributed to research in topics: Quantum dot & Photon. The author has an hindex of 27, co-authored 104 publications receiving 5508 citations. Previous affiliations of Andreas Löffler include Osram Opto Semiconductors GmbH.
Papers
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Investigation of strong coupling between single quantum dot excitons and single photons in pillar microcavities
G. Sek,G. Sek,C. Hofmann,Johann Peter Reithmaier,Andreas Löffler,Stephan Reitzenstein,Martin Kamp,Leonid Veniaminovich Keldysh,V. D. Kulakovskii,T. L. Reinecke,Alfred Forchel +10 more
TL;DR: In this article, a Bragg reflector AlAs/GaAs planar cavities with a low density In 0.3 Ga 0.6 As quantum dot layer by molecular beam epitaxy were constructed using electron beam lithography and deep plasma etching.
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Dispersive properties of photonic crystal waveguide resonators
TL;DR: In this paper, the authors investigated the group delay and the dispersion of light propagating through photonic crystal (PhC) resonators defined in 240 nm thick GaAs membranes.
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Magnetooptical investigations of single self assembled In0.3Ga0.7As quantum dots
TL;DR: In this article, a magneto-optical investigation of large elongated single self assembled In 0.3 Ga 0.7 As quantum dots with a low surface density of 3 × 10 9 cm -2.
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Multi-dimensional laser spectroscopy of exciton-polaritons with spatial light modulators
P. Mai,B. Pressl,M. Sassermann,Z. Vörös,Gregor Weihs,Christian Schneider,Andreas Löffler,Sven Höfling,Alfred Forchel +8 more
TL;DR: In this article, an experimental system that allows one to easily access the dispersion curve of exciton-polaritons in a microcavity is described. But this system is based on two spatial light modulators (SLM), one for changing the excitation angles (momenta), and the other for tuning excitation wavelength.
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Scanning transmission electron microscope study on vertically correlated InGaAs/GaAs quantum dots
A. Sauerwald,Tilmar Kümmell,D. Peskes,Gerd Bacher,Andreas Löffler,J.P. Reithmaier,Alfred Forchel +6 more
TL;DR: In this article, the probability of a laterally correlated growth is strongly enhanced with decreasing spacer layer thickness, but no measurable variation of both the size and the average In alloy concentration of the quantum dots within the stacks is found, making the structures ideally suited for potential applications in quantum information processing.