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Andreas Löffler
Researcher at University of Würzburg
Publications - 104
Citations - 5881
Andreas Löffler is an academic researcher from University of Würzburg. The author has contributed to research in topics: Quantum dot & Photon. The author has an hindex of 27, co-authored 104 publications receiving 5508 citations. Previous affiliations of Andreas Löffler include Osram Opto Semiconductors GmbH.
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Journal ArticleDOI
Characterization of two-threshold behavior of the emission from a GaAs microcavity
Jean-Sebastian Tempel,Franziska Veit,Marc Aßmann,L. E. Kreilkamp,A. Rahimi-Iman,Andreas Löffler,Sven Höfling,Stephan Reitzenstein,Lukas Worschech,Alfred Forchel,Manfred Bayer +10 more
TL;DR: In this article, the authors compare two regimes indicative of polariton lasing and photon lasing of a planar GaAs/GaAlAs microcavity with zero detuning between the bare cavity mode and the quantum-well exciton.
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Exciton?polariton condensates near the Dirac point in a triangular lattice
Na Young Kim,Kenichiro Kusudo,Kenichiro Kusudo,Andreas Löffler,Sven Höfling,Alfred Forchel,Yoshihisa Yamamoto,Yoshihisa Yamamoto +7 more
TL;DR: In this article, the authors constructed the band structures near Dirac points, the vertices of the first hexagonal Brillouin zone with exciton-polariton condensates trapped in a triangular lattice.
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Ultrahigh-quality photonic crystal cavity in GaAs.
TL;DR: Membrane-based photonic crystal GaAs cavities with a double-heterostructure design show the highest quality factors to date, exhibiting quality factors higher than 10(5) and fine-tuned in steps smaller than 2 nm by digital etching.
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Coherent photonic coupling of semiconductor quantum dots
Stephan Reitzenstein,Andreas Löffler,C. Hofmann,Alexander Kubanek,Martin Kamp,Johann Peter Reithmaier,Alfred Forchel,V. D. Kulakovskii,Leonid Veniaminovich Keldysh,Ilya Ponomarev,T. L. Reinecke +10 more
TL;DR: A new type of coupling between quantum dot excitons mediated by the strong single-photon field in a high-finesse micropillar cavity is reported and can be easily distinguished from cases of sequential strong coupling of two quantum dots.
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Influence of the strain on the formation of GaInAs/GaAs quantum structures
Andreas Löffler,Johann Peter Reithmaier,Alfred Forchel,A. Sauerwald,Dennis Peskes,Tilmar Kümmell,Gerd Bacher +6 more
TL;DR: In this paper, the influence of the strain on the dot morphology of GaInAs quantum dots has been investigated and the strain was varied by the In content in GaInA/GaAs quantum dot from 60% down to 30% by keeping the emission wavelength at about 900nm at 10 K.