Andreas Stoffers

TL;DR: In this article, a liquid state manipulation method for solidified Bi 0.5 Sb 1.5 Te 3 alloy with subsequent melt spinning, ball milling, and spark plasma sintering processes is combined to construct dedicated microstructures containing plenty of 60° twin boundaries.

TL;DR: In this paper, the influence of crystallographic structure and impurity decoration on the recombination activity at grain boundaries in multicrystalline silicon ingots has been investigated and a direct correlation between grain boundary structure, atomic scale segregation information, and electrical activity has been established.

TL;DR: The unique combination of atomic-scale composition measurements, employing atom probe tomography, atomic structure determination with picometer resolution by aberration-corrected scanning transmission electron microscopy, and atomistic simulations reveals site-specific linear segregation features at grain boundary facet junctions.

TL;DR: This work presents the complex atomic interface structure of an asymmetric Σ9 tilt grain boundary in silicon, observed by high resolution scanning transmission electron microscopy (HR-STEM) and explained by atomistic modeling and computer simulation.

TL;DR: Joint mapping of the atomistic details of the grain boundary topology, in conjunction with chemical decoration, enables a deeper understanding of the segregation of impurities observed at such grain boundaries.