Journal ArticleDOI
Grain boundary segregation in multicrystalline silicon: correlative characterization by EBSD, EBIC, and atom probe tomography
Andreas Stoffers,Oana Cojocaru-Mirédin,Winfried Seifert,Stefan Zaefferer,Stephan Riepe,Dierk Raabe +5 more
TLDR
In this paper, the influence of crystallographic structure and impurity decoration on the recombination activity at grain boundaries in multicrystalline silicon ingots has been investigated and a direct correlation between grain boundary structure, atomic scale segregation information, and electrical activity has been established.Abstract:
This study aims to better understand the influence of crystallographic structure and impurity decoration on the recombination activity at grain boundaries in multicrystalline silicon. A sample of the upper part of a multicrystalline silicon ingot with intentional addition of iron and copper has been investigated. Correlative electron-beam-induced current, electron backscatter diffraction, and atom probe tomography data for different types of grain boundaries are presented. For a symmetric coherent Σ3 twin boundary, with very low recombination activity, no impurities are detected. In case of a non-coherent (random) high-angle grain boundary and higher order twins with pronounced recombination activity, carbon and oxygen impurities are observed to decorate the interface. Copper contamination is detected for the boundary with the highest recombination activity in this study, a random high-angle grain boundary located in the vicinity of a triple junction. The 3D atom probe tomography study presented here is the first direct atomic scale identification and quantification of impurities decorating grain boundaries in multicrystalline silicon. The observed deviations in chemical decoration and induced current could be directly linked with different crystallographic structures of silicon grain boundaries. Hence, the current work establishes a direct correlation between grain boundary structure, atomic scale segregation information, and electrical activity. It can help to identify interface–property relationships for silicon interfaces that enable grain boundary engineering in multicrystalline silicon. Copyright © 2015 John Wiley & Sons, Ltd.read more
Citations
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Journal ArticleDOI
Strengthening and strain hardening mechanisms in a precipitation-hardened high-Mn lightweight steel
Mengji Yao,Emanuel David Welsch,Dirk Ponge,Seyed Masood Hafez Haghighat,Stefanie Sandlöbes,Stefanie Sandlöbes,Pyuck-Pa Choi,Michael Herbig,Ivan Bleskov,Tilmann Hickel,Marta Lipińska-Chwałek,Marta Lipińska-Chwałek,Pratheek Shanthraj,Christina Scheu,Stefan Zaefferer,Baptiste Gault,Dierk Raabe +16 more
TL;DR: In this article, the strengthening and strain hardening mechanisms in an aged high-Mn lightweight steel (Fe-30.4Mn-8Al-1.2C, wt.%) were studied by electron channeling contrast imaging (ECCI), transmission electron microscopy (TEM), atom probe tomography (APT) and correlative TEM/APT.
Journal ArticleDOI
Three-dimensional nanoscale characterisation of materials by atom probe tomography
Arun Devaraj,Daniel E. Perea,Jia Liu,Lyle M. Gordon,Ty J. Prosa,Pritesh Parikh,David R. Diercks,S. Meher,R. Prakash Kolli,Ying Shirley Meng,S. Thevuthasan +10 more
TL;DR: The development of 3D characterisation techniques with high spatial and mass resolution is crucial for understanding and developing advanced materials for many engineering applications as well as for understanding natural materials as mentioned in this paper.
Journal ArticleDOI
Local Crystal Misorientation Influences Non-Radiative Recombination
Sarthak Jariwala,Hongyu Sun,Gede W. P. Adhyaksa,Andries Lof,Loreta A. Muscarella,Bruno Ehrler,Erik C. Garnett,David S. Ginger +7 more
TL;DR: In this paper, the authors use EBSD to map the local crystal orientations, grains, and grain boundaries in CH3NH3PbI3 (MAPI) perovskite thin films.
Journal ArticleDOI
Local Crystal Misorientation Influences Non-radiative Recombination in Halide Perovskites
Sarthak Jariwala,Hongyu Sun,Gede W. P. Adhyaksa,Andries Lof,Loreta A. Muscarella,Bruno Ehrler,Erik C. Garnett,David S. Ginger +7 more
TL;DR: In this article, the authors used EBSD to map the local crystal orientations, grains, and grain boundaries in CH3NH3PbI3 (MAPI) perovskite thin films.
Journal ArticleDOI
Strain-Induced Asymmetric Line Segregation at Faceted Si Grain Boundaries.
Christian Liebscher,Andreas Stoffers,Masud Alam,Liverios Lymperakis,Oana Cojocaru-Mirédin,Baptiste Gault,Jörg Neugebauer,Gerhard Dehm,Christina Scheu,Dierk Raabe +9 more
TL;DR: The unique combination of atomic-scale composition measurements, employing atom probe tomography, atomic structure determination with picometer resolution by aberration-corrected scanning transmission electron microscopy, and atomistic simulations reveals site-specific linear segregation features at grain boundary facet junctions.
References
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Journal ArticleDOI
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