A
Andrew Ketterson
Researcher at TriQuint Semiconductor
Publications - 30
Citations - 585
Andrew Ketterson is an academic researcher from TriQuint Semiconductor. The author has contributed to research in topics: High-electron-mobility transistor & Monolithic microwave integrated circuit. The author has an hindex of 13, co-authored 30 publications receiving 501 citations.
Papers
More filters
Journal ArticleDOI
MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$
Jia Guo,Guowang Li,Faiza Afroz Faria,Yu Cao,Ronghua Wang,Jai Verma,Xiang Gao,Shiping Guo,Andrew Ketterson,Michael L. Schuette,Paul Saunier,Mark A. Wistey,Debdeep Jena,Huili Xing +13 more
TL;DR: In this paper, nonalloyed ohmic contacts regrown by molecular beam epitaxy were made on InAlN, AlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs).
Journal ArticleDOI
Gate-recessed integrated E/D GaN HEMT technology with f T /f max >300 GHz
Michael L. Schuette,Andrew Ketterson,Bo Song,Tso-Min Chou,Manyam Pilla,Hua-Quen Tserng,Xiang Gao,Shiping Guo,Patrick Fay,Huili Grace Xing,Paul Saunier +10 more
TL;DR: In this paper, 1000-transistor-level monolithic circuit integration of sub-30nm gate-recessed E/D GaN high-electron-mobility transistors with fT and fmax above 300 GHz was reported.
Journal ArticleDOI
Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{\rm m}$ and $f_{\rm T}$
Dong Seup Lee,Han Wang,Allen Hsu,Mohamed Azize,Oleg Laboutin,Yu Cao,Jerry W. Johnson,Edward Beam,Andrew Ketterson,Michael L. Schuette,Paul Saunier,Tomas Palacios +11 more
TL;DR: In this paper, the linearity of InAlN/GaN high-electron-mobility transistor (HEMT) with a nanowire channel structure was investigated.
Journal ArticleDOI
Impact of $\hbox{Al}_{2}\hbox{O}_{3}$ Passivation Thickness in Highly Scaled GaN HEMTs
Dong Seup Lee,Oleg Laboutin,Yu Cao,Wayne Johnson,Andrew Ketterson,Michael L. Schuette,Paul Saunier,Tomas Palacios +7 more
TL;DR: In this paper, the influence of the passivation thickness on the device characteristics of InAlGaN/GaN high-electron-mobility transistors with a gate length between sub-30 and 70 nm was studied.
Journal ArticleDOI
Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates
Bo Song,Berardi Sensale-Rodriguez,Ronghua Wang,Jia Guo,Zongyang Hu,Yuanzheng Yue,Faiza Afroz Faria,Michael L. Schuette,Andrew Ketterson,Edward Beam,Paul Saunier,Xiang Gao,Shiping Guo,Patrick Fay,Debdeep Jena,Huili Grace Xing +15 more
TL;DR: In this article, the effects of fringing capacitances on the high-frequency performance of T-gate GaN high-electron mobility transistors (HEMTs) are investigated.