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Xiang Gao
Researcher at TriQuint Semiconductor
Publications - 65
Citations - 2891
Xiang Gao is an academic researcher from TriQuint Semiconductor. The author has contributed to research in topics: Gallium nitride & Breakdown voltage. The author has an hindex of 26, co-authored 55 publications receiving 2343 citations.
Papers
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Journal ArticleDOI
InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz
Yuanzheng Yue,Zongyang Hu,Jia Guo,Berardi Sensale-Rodriguez,Guowang Li,Ronghua Wang,Faiza Afroz Faria,Tian Fang,Bo Song,Xiang Gao,Shiping Guo,T. Kosel,Gregory L. Snider,Patrick Fay,Debdeep Jena,Huili Xing +15 more
TL;DR: In this paper, the authors reported 30-nm-gate-length InAlN/Aln/GaN/SiC high-electron-mobility transistors with a record current gain cutoff frequency (fT) of 370 GHz.
Journal ArticleDOI
300-GHz InAlN/GaN HEMTs With InGaN Back Barrier
TL;DR: In this paper, lattice-matched In0.17Al0.83N/GaN high-electron-mobility transistors on a SiC substrate with a record current gain cutoff frequency (fT) of 300 GHz were presented.
Journal ArticleDOI
High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates
TL;DR: In this article, a GaN vertical fin power field effect transistor structure with submicron fin-shaped channels on bulk GaN substrates was reported, and a combined dry/wet etch was used to get smooth fin vertical sidewalls.
Journal ArticleDOI
Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
Zongyang Hu,Zongyang Hu,Kazuki Nomoto,Kazuki Nomoto,Bo Song,Bo Song,Mingda Zhu,Mingda Zhu,Meng Qi,Ming Pan,Xiang Gao,Vladimir Protasenko,Vladimir Protasenko,Debdeep Jena,Debdeep Jena,Huili Grace Xing,Huili Grace Xing +16 more
TL;DR: In this paper, the authors show that vertical GaN p-n diodes with a mesa diameter of 107μm can achieve an avalanche breakdown voltage (BV) of > 1.4 kV under reverse bias, an ideality factor plateau of ∼2.0 in a forward bias window followed by a near unity ideality Factor of 1.1, which is consistently achieved over a temperature range of 300-400
Journal ArticleDOI
245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment
TL;DR: In this article, a lattice-matched In0.17Al0.83N/GaN high-electron mobility transistors on a SiC substrate with a record current gain cutoff frequency (fT) was reported.