R
Ronghua Wang
Researcher at University of Notre Dame
Publications - 34
Citations - 1465
Ronghua Wang is an academic researcher from University of Notre Dame. The author has contributed to research in topics: High-electron-mobility transistor & Gallium nitride. The author has an hindex of 18, co-authored 32 publications receiving 1302 citations.
Papers
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Journal ArticleDOI
InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz
Yuanzheng Yue,Zongyang Hu,Jia Guo,Berardi Sensale-Rodriguez,Guowang Li,Ronghua Wang,Faiza Afroz Faria,Tian Fang,Bo Song,Xiang Gao,Shiping Guo,T. Kosel,Gregory L. Snider,Patrick Fay,Debdeep Jena,Huili Xing +15 more
TL;DR: In this paper, the authors reported 30-nm-gate-length InAlN/Aln/GaN/SiC high-electron-mobility transistors with a record current gain cutoff frequency (fT) of 370 GHz.
Journal ArticleDOI
Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance
Ronghua Wang,Paul Saunier,Xiu Xing,Chuanxin Lian,Xiang Gao,Shiping Guo,Gregory L. Snider,Patrick Fay,Debdeep Jena,Huili Xing +9 more
TL;DR: In this paper, a 150-nm gate enhancement-mode InAlN/Aln/GaN high-electron-mobility transistors are demonstrated on SiC substrates using plasma-based gate-recess etch.
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MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$
Jia Guo,Guowang Li,Faiza Afroz Faria,Yu Cao,Ronghua Wang,Jai Verma,Xiang Gao,Shiping Guo,Andrew Ketterson,Michael L. Schuette,Paul Saunier,Mark A. Wistey,Debdeep Jena,Huili Xing +13 more
TL;DR: In this paper, nonalloyed ohmic contacts regrown by molecular beam epitaxy were made on InAlN, AlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs).
Journal ArticleDOI
Effect of Optical Phonon Scattering on the Performance of GaN Transistors
TL;DR: In this paper, a model based on optical phonon scattering is developed to explain peculiarities in the current drive, transconductance, and high-speed behavior of short-gate-length GaN transistors.
Journal ArticleDOI
210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation
Ronghua Wang,Guowang Li,Oleg Laboutin,Yu Cao,Wayne Johnson,Gregory L. Snider,Patrick Fay,Debdeep Jena,Huili Xing +8 more
TL;DR: In this article, a dielectric-free passivation (DFP) process was applied to the access region of a GaN-based high-electron mobility transistors (HEMTs) for the first time.