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Andrius Baltuška

Researcher at Vienna University of Technology

Publications -  592
Citations -  16521

Andrius Baltuška is an academic researcher from Vienna University of Technology. The author has contributed to research in topics: Laser & Femtosecond. The author has an hindex of 55, co-authored 566 publications receiving 14931 citations. Previous affiliations of Andrius Baltuška include University of Groningen & University of Tokyo.

Papers
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Journal ArticleDOI

Observing the influence of the Coulomb binding potential on momentum spectra of strong-field driven electronic wave packets

TL;DR: In this article, the influence of the Coulomb binding potential on momentum spectra of electron wave packets created by strong-field ionization in a two-color laser field was investigated.
Proceedings ArticleDOI

Completely monolithic Ytterbium fiber chirped pulse amplifier

TL;DR: In this paper, a completely monolithic Yb-fiber chirped pulse amplifier that uses a dispersion matched fiber stretcher and hollow core photonic bandgap compressor fiber is presented.
Proceedings ArticleDOI

Multi-mJ single-filament supercontinuum generation from IR OPCPA

TL;DR: In this article, a four-stage infrared OPCPA system is presented based on a DPSS Yb-MOPA-driven (Pharos, Light Conversion Ltd.), CEP-stable front-end and two successive power-amplification stages pumped by a 100mJ 60-ps 20-Hz 1.064-µm Nd:YAG amplifier.
Proceedings ArticleDOI

Dynamic stray light and background correction to allow truly simultaneous optical stimulation and multiphoton imaging

TL;DR: In this paper , a real-time subtraction of background light from fluorescence imaging data is proposed to remove image artifacts that cause signal clipping in a conventional imaging setup, which can reduce uncorrelated background signals.
Proceedings ArticleDOI

Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers

TL;DR: In this paper, the absorption recovery times of the InGaN/GaN quantum wells can be controlled by varying the thickness of the low-temperature GaN buffers, and the de graded crystalline quality of the absorbing regions caused an increased density of nonradiative recombination centers, which were responsible for the fast recovery of the absorption.