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Anthony M. Phan
Researcher at Goddard Space Flight Center
Publications - 50
Citations - 641
Anthony M. Phan is an academic researcher from Goddard Space Flight Center. The author has contributed to research in topics: Single event upset & Power semiconductor device. The author has an hindex of 13, co-authored 50 publications receiving 549 citations.
Papers
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Journal ArticleDOI
Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions
Brian D. Sierawski,Jonathan A. Pellish,Robert A. Reed,Ronald D. Schrimpf,Kevin M. Warren,Robert A. Weller,Marcus H. Mendenhall,Jeffrey D. Black,A. D. Tipton,M.A. Xapsos,Robert Baumann,Xiaowei Deng,Michael J. Campola,M. Friendlich,Hak Kim,Anthony M. Phan,Christina Seidleck +16 more
TL;DR: In this paper, direct ionization from low energy protons is shown to cause upsets in a 65-nm bulk CMOS SRAM, consistent with results reported for other deep submicron technologies.
Journal ArticleDOI
32 and 45 nm Radiation-Hardened-by-Design (RHBD) SOI Latches
Kenneth P. Rodbell,David F. Heidel,Jonathan A. Pellish,Paul W. Marshall,H.H.K. Tang,Conal E. Murray,Ken LaBel,M.S. Gordon,Kevin Stawiasz,J.R. Schwank,Melanie D. Berg,Hak Kim,M. Friendlich,Anthony M. Phan,Christina Seidleck +14 more
TL;DR: In this paper, single event upset (SEU) experimental heavy ion data and modeling results for CMOS, silicon-on-insulator (SOI), 32 nm and 45 nm stacked and DICE latches are presented.
Journal ArticleDOI
Single-Event Effect Performance of a Commercial Embedded ReRAM
Dakai Chen,Hak Kim,Anthony M. Phan,Edward Wilcox,Kenneth A. LaBel,Stephen P. Buchner,Ani Khachatrian,Nicolas J.-H. Roche +7 more
TL;DR: In this paper, the single-event effect characteristics of a production-level embedded resistive memory were investigated, which is a reduction-oxidation random access memory embedded inside a microcontroller.
Journal ArticleDOI
Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3-D NAND Flash Memory
Dakai Chen,Edward P. Wilcox,Raymond L. Ladbury,Christina Seidleck,Hak Kim,Anthony M. Phan,Kenneth A. LaBel +6 more
TL;DR: In this paper, the effects of heavy ion and proton irradiation for a 3D NAND flash were evaluated for single-event upset (SEU) sensitivity to a planar NAND of identical density in the MLC storage mode.
Journal ArticleDOI
Criticality of Low-Energy Protons in Single-Event Effects Testing of Highly-Scaled Technologies
Jonathan A. Pellish,Paul W. Marshall,Kenneth P. Rodbell,Michael S. Gordon,Kenneth A. LaBel,James R. Schwank,Nathaniel A. Dodds,C.M. Castaneda,Melanie D. Berg,Hak Kim,Anthony M. Phan,Christina Seidleck +11 more
TL;DR: In this paper, low-energy proton and alpha particle SEE data on a 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) was reported.